Document
Power MOSFET
IRFPG30, SiHFPG30
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
1000 VGS = 10 V
80 10 42 Single
TO-247
5.0 D
S
D G
G
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
TO-247 IRFPG30PbF SiHFPG30-E3 IRFPG30 SiHFPG30
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor
VGS at 10 V
TC = 25 °C TC = 100 °C
VGS ID IDM
Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc
TC = 25 °C
EAS IAR EAR PD dV/dt
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 35 mH, RG = 25 Ω, IAS = 3.1 A (see fig. 12). c. ISD ≤ 3.1 A, dI/dt ≤ 80 A/µs, VDD ≤ 600, TJ ≤ 150 °C. d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
LIMIT 1000 ± 20 3.1 2.0
12 1.0 180 3.1 13 125 1.0 - 55 to + 150 300d 10 1.1
UNIT V
A
W/°C mJ A mJ W V/ns °C
lbf · in N·m
Document Number: 91252 S-81394-Rev. A, 21-Jul-08
www.vishay.com 1
IRFPG30, SiHFPG30
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface
RthJA RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP. -
0.24 -
MAX. 40 1.0
UNIT °C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance Forward Transconductance Dynamic
VDS ΔVDS/TJ VGS(th)
IGSS
IDSS
RDS(on) gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 20 V
VDS = 1000 V, VGS = 0 V
VDS = 800 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 1.9 Ab
VDS = 50 V, ID = 1.9 Ab
1000 -
2.0 -
2.4
- -V 1.4 - V/°C
- 4.0 V - ± 100 nA - 100
µA - 500 - 5.0 Ω - -S
Input Capacitance
Ciss
VGS = 0 V,
- 980 -
Output Capacitance
Coss
VDS = 25 V,
- 140 - pF
Reverse Transfer Capacitance
Crss
f = 1.0 MHz, see fig. 5
- 50 -
Total Gate Charge Gate-Source Charge Gate-Drain Charge
Qg - - 80
ID = 3.1 A, VDS = 400 V
Qgs
VGS = 10 V
see fig. 6 and 13b
-
- 10 nC
Qgd - - 42
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
td(on) tr
td(off) tf
- 12 -
VDD = 500 V, ID = 3.1 A,
- 24 ns
RG = 12 Ω, RD = 170 Ω, see fig. 10b - 89 -
- 29 -
Internal Drain Inductance Internal Source Inductance
LD
Between lead, 6 mm (0.25") from
D
package and center of
G
LS die contact
S
- 5.0 nH
- 13 -
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta
IS
MOSFET symbol showing the
integral reverse ISM p - n junction diode
D
G S
- - 3.1 A
- - 12
Body Diode Voltage
VSD TJ = 25 °C, IS = 3.1 A, VGS = 0 Vb - - 1.8 V
Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
trr
TJ = 25 °C, IF = 3.1 A, dI/dt = 100 A/µsb
-
410 620 ns
Qrr - 1.3 2.0 µC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com 2
Document Number: 91252 S-81394-Rev. A, 21-Jul-08
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
IRFPG30, SiHFPG30
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91252 S-81394-Rev. A, 21-Jul-08
www.vishay.com 3
IRFPG30, SiHFPG30
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage.