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IRFPG30 Dataheets PDF



Part Number IRFPG30
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet IRFPG30 DatasheetIRFPG30 Datasheet (PDF)

Power MOSFET IRFPG30, SiHFPG30 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 1000 VGS = 10 V 80 10 42 Single TO-247 5.0 D S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available RoHS* COMPLIANT DESCRIPTION Third generation Pow.

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Power MOSFET IRFPG30, SiHFPG30 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 1000 VGS = 10 V 80 10 42 Single TO-247 5.0 D S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. TO-247 IRFPG30PbF SiHFPG30-E3 IRFPG30 SiHFPG30 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VGS ID IDM Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc TC = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 35 mH, RG = 25 Ω, IAS = 3.1 A (see fig. 12). c. ISD ≤ 3.1 A, dI/dt ≤ 80 A/µs, VDD ≤ 600, TJ ≤ 150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply LIMIT 1000 ± 20 3.1 2.0 12 1.0 180 3.1 13 125 1.0 - 55 to + 150 300d 10 1.1 UNIT V A W/°C mJ A mJ W V/ns °C lbf · in N·m Document Number: 91252 S-81394-Rev. A, 21-Jul-08 www.vishay.com 1 IRFPG30, SiHFPG30 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface RthJA RthCS Maximum Junction-to-Case (Drain) RthJC TYP. - 0.24 - MAX. 40 1.0 UNIT °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic VDS ΔVDS/TJ VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID = 250 µA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 µA VGS = ± 20 V VDS = 1000 V, VGS = 0 V VDS = 800 V, VGS = 0 V, TJ = 125 °C VGS = 10 V ID = 1.9 Ab VDS = 50 V, ID = 1.9 Ab 1000 - 2.0 - 2.4 - -V 1.4 - V/°C - 4.0 V - ± 100 nA - 100 µA - 500 - 5.0 Ω - -S Input Capacitance Ciss VGS = 0 V, - 980 - Output Capacitance Coss VDS = 25 V, - 140 - pF Reverse Transfer Capacitance Crss f = 1.0 MHz, see fig. 5 - 50 - Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg - - 80 ID = 3.1 A, VDS = 400 V Qgs VGS = 10 V see fig. 6 and 13b - - 10 nC Qgd - - 42 Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf - 12 - VDD = 500 V, ID = 3.1 A, - 24 ns RG = 12 Ω, RD = 170 Ω, see fig. 10b - 89 - - 29 - Internal Drain Inductance Internal Source Inductance LD Between lead, 6 mm (0.25") from D package and center of G LS die contact S - 5.0 nH - 13 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta IS MOSFET symbol showing the integral reverse ISM p - n junction diode D G S - - 3.1 A - - 12 Body Diode Voltage VSD TJ = 25 °C, IS = 3.1 A, VGS = 0 Vb - - 1.8 V Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge trr TJ = 25 °C, IF = 3.1 A, dI/dt = 100 A/µsb - 410 620 ns Qrr - 1.3 2.0 µC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. www.vishay.com 2 Document Number: 91252 S-81394-Rev. A, 21-Jul-08 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted IRFPG30, SiHFPG30 Vishay Siliconix Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91252 S-81394-Rev. A, 21-Jul-08 www.vishay.com 3 IRFPG30, SiHFPG30 Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage.


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