Power MOSFET
Power MOSFET
IRFPG40, SiHFPG40
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) ...
Description
Power MOSFET
IRFPG40, SiHFPG40
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
1000 VGS = 10 V
120 16 65 Single
3.5
TO-247
D
S
D G
G
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
FEATURES Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mouting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
TO-247 IRFPG40PbF SiHFPG40-E3 IRFPG40 SiHFPG40
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current Pulsed Drain Currenta
VGS at 10 V
TC = 25 °C TC = 100 °C
ID IDM
Linear Derating Factor
Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya
EAS IAR EAR
Maximum Power Dissipation Peak Diode Recovery dV/dtc
TC = 25 °C
PD dV/dt
Oper...
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