FD600R17KF6CB2

Technische Information / Technical Information IGBT-Module IGBT-Modules FD 600 R 17 KF6C B2 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current TC = 80 °C TC = 25 °C Periodischer Kollektor Spitzenstrom repetitive peak collctor current tp = 1 ms, TC=80°C Gesamt-Verlustleistung total power dissipation TC=25°C, Transistor Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current tp = 1 ms Grenzlastintegral der Diode I2t - value, Diode VR = 0V, tp = 10ms, TVj = 125°C Isolations-Prüfspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. Charakteristische Werte / Characteristic values Transistor / Transistor Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage IC = 600A, VGE = 15V, Tvj = 25°C IC = 600A, VGE = 15V, Tvj = 125°C IC = 40mA, VCE = VGE, Tvj = 25°C Gateladung gate charge VGE = -15V ... +15V Eingangskapazität input capacitance f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V Rückwirkungskapazität reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V VCE = 1700V, VGE = 0V, Tvj = 25°C VCE = 1700V, VGE = 0V, Tvj = 125°C VCE = 0...