2SB1068

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SB1068 TRANSISTOR (PNP) TO – 92 1. EMITTER FEATURES z Low Collector Saturation Voltage z High DC Current Gain z High Collector Power Dissipation z Complementary To The 2SD1513 NPN Transistor MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2. COLLECTOR 3. BASE Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -20 -16 -6 -2 625 200 150 -55~+150 Unit V V V A mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Collector output capacitance Transition frequency Symbol Test conditions Min Typ Max Unit V(BR)CBO IC=- 0.1mA,IE=0 -20 V V(BR)CEO IC=-1mA,IB=0 -16 V V(BR)EBO IE=-0.1mA,IC=0 -6 V ICBO VCB=-16V,IE=0 -0.1 μA IEBO VEB=-6V,IC=0 -0.1 μA hFE(1) VCE=-2V, IC=-0.1A 135 650 hFE(2) VCE=-2V, IC=-1.5A 100 VCE(sat)1 IC=-1A,IB=-10mA -0.4 V VCE(sat)2 IC=-1.5A,IB=-20mA -0.5 V VCE(sat)3 IC=-1.5A,IB=-75mA -0.5 V VBE (sat) IC=-1.5A,IB=-75mA -1.2 V VBE VCE=-6V, IC=-5mA -0.55 -...