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MT29F1G08ABAEAWP Dataheets PDF



Part Number MT29F1G08ABAEAWP
Manufacturers Micron Technology
Logo Micron Technology
Description NAND Flash Memory
Datasheet MT29F1G08ABAEAWP DatasheetMT29F1G08ABAEAWP Datasheet (PDF)

Micron Confidential and Proprietary 1Gb x8, x16: NAND Flash Memory Features NAND Flash Memory MT29F1G08ABAEAWP, MT29F1G08ABAEAH4, MT29F1G08ABBEAH4 MT29F1G16ABBEAH4, MT29F1G08ABBEAHC, MT29F1G16ABBEAHC Features • Open NAND Flash Interface (ONFI) 1.0-compliant1 • Single-level cell (SLC) technology • Organization – Page size x8: 2112 bytes (2048 + 64 bytes) – Page size x16: 1056 words (1024 + 32 words) – Block size: 64 pages (128K + 4K bytes) – Device size: 1Gb: 1024 blocks • Asynchronous I/O pe.

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Micron Confidential and Proprietary 1Gb x8, x16: NAND Flash Memory Features NAND Flash Memory MT29F1G08ABAEAWP, MT29F1G08ABAEAH4, MT29F1G08ABBEAH4 MT29F1G16ABBEAH4, MT29F1G08ABBEAHC, MT29F1G16ABBEAHC Features • Open NAND Flash Interface (ONFI) 1.0-compliant1 • Single-level cell (SLC) technology • Organization – Page size x8: 2112 bytes (2048 + 64 bytes) – Page size x16: 1056 words (1024 + 32 words) – Block size: 64 pages (128K + 4K bytes) – Device size: 1Gb: 1024 blocks • Asynchronous I/O performance – tRC/tWC: 20ns (3.3V), 25ns (1.8V) • Array performance – Read page: 25µs – Program page: 200µs (TYP, 3.3V and 1.8V) – Erase block: 700µs (TYP) • Command set: ONFI NAND Flash Protocol • Advanced command set – Program page cache mode – Read page cache mode – One-time programmable (OTP) mode – Read unique ID – Internal data move – Block lock (1.8V only) • Operation status byte provides software method for detecting – Operation completion – Pass/fail condition – Write-protect status • Internal data move operations supported within the device from which data is read • Ready/busy# (R/B#) signal provides a hardware method for detecting operation completion • WP# signal: write protect entire device • First block (block address 00h) is valid when shipped from factory with ECC. For minimum required ECC, see Error Management. • Block 0 requires 1-bit ECC if PROGRAM/ERASE cycles are less than 1000 • RESET (FFh) required as first command after power-on • Alternate method of device initialization (Nand_Init) after power up3 (contact factory) • Quality and reliability – Data retention: JESD47 compliant; see qualification report – Endurance: 100,000 PROGRAM/ERASE cycles • Operating Voltage Range – VCC: 2.7–3.6V – VCC: 1.7–1.95V • Operating temperature: – Commercial (CT): –0ºC to +70ºC – Industrial (IT): –40ºC to +85ºC • Package – 48-pin TSOP Type 1, CPL2 Notes: 1. The ONFI 1.0 specification is available at www.onfi.org. 2. CPL = Center parting line. 3. Available only in the 1.8V VFBGA package. CCMTD-1725822587-1599 m68m_nonecc_embedded_it_ct.pdf - Rev. O 04/2023 EN 1 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2015 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. Micron Confidential and Proprietary 1Gb x8, x16: NAND Flash Memory Features Part Numbering Information Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by using Micron’s part catalog search at www.micron.com. To compare features and specifications by device type, visit www.micron.com/products. Contact the factory for devices not found. Figure 1: Marketing Part Number Chart MT 29F 4G 08 A B A F A 12 - AAT ES :D Micron Technology Product Family 29F = NAND Flash memory Density 1G = 1Gb 2G = 2Gb 4G = 4Gb 8G = 8Gb 16G = 16Gb Device Width 01 = 1-bit 08 = 8-bit 16 = 16-bit Level A = SLC Classification Mark Die nCE RnB I/O Channel B 1 1 1 1 D2 1 1 1 J 4 2 2 1 Operating Voltage Range A = 3.3V (2.7–3.6V) B = 1.8V (1.7–1.95V) C = VCC: 3.3V (2.7–3.6V); VCCQ: 1.8V (1.7–1.95V) Generation Feature Set D = Feature set D E = Feature set E F = Feature set F G = Feature set G Design Revision (shrink) Production Status Blank = Production ES = Engineering sample MS = Mechanical sample QS = Qualification sample COMPONENT_REVISION 1 = Cu leadframe (L/F) material; if not specified, material is standard alloy 42 Special Options Blank X = Product longevity program (PLP) Operating Temperature Range Blank = Commercial (0°C to +70°C) IT = Industrial (–40°C to +85°C) AIT = Automotive Industrial (–40°C to +85°C) AAT = Automotive (–40°C to +105°C) Speed Grade 12 = 166MT/s (synchronous mode) Blank = Asynchronous mode Package Code SF = 16-pin SO (10.3mm x 10.3mm x 2.65mm) WB = 8-pin U-PDFN (8mm x 6mm x 0.65mm) W9 = 8-pin W-PDFN (8mm x 6mm) 12 = 24-ball TBGA (6mm x 8mm x 1.2mm) WP = 48-pin TSOP Type 1 HC = 63-ball VFBGA (10.5mm x 13mm x 1.0mm) H4 = 63-ball VFBGA (9mm x 11mm x1.0mm) Interface A = Asynchronous only B = Sync/Async CCMTD-1725822587-1599 m68m_nonecc_embedded_it_ct.pdf - Rev. O 04/2023 EN 2 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2015 Micron Technology, Inc. All rights reserved. Micron Confidential and Proprietary 1Gb x8, x16: NAND Flash Memory Contents Important Notes and Warnings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 General Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Signal Descriptions and Assignments . . . . . . . . .


MT29F1G08ABAEAWP-IT MT29F1G08ABAEAWP MT29F1G08ABAEAH4-IT


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