PC28F00AP33BFA

512Mb, 1Gb, 2Gb: P33-65nm Features Micron Parallel NOR Flash Embedded Memory (P33-65nm) JS28F512P33BFD, JS28F512P33TFA, JS28F512P33EFA PC28F512P33BFD, PC28F512P33TFA, PC28F512P33EFA JS28F00AP33BFA, JS28F00AP33TFA, JS28F00AP33EFA PC28F00AP33BFA, PC28F00AP33TFA, PC28F00AP33EFA, PC28F00BP33EFA Features High performance Easy BGA package features – 95ns initial access for 512Mb, 1Gb Easy BGA – 100ns initial access for 2Gb Easy BGA – 25ns 16-word asychronous page read mode – 52 MHz (Easy BGA) with zero WAIT states and 17ns clock-to-data output synchronous burst read mode – 4-, 8-, 16-, and continuous word options for burst mode TSOP package features – 105ns initial access for 512Mb, 1Gb TSOP Both Easy BGA and TSOP package features – Buffered enhanced factory programming (BEFP) at 2 MB/s (TYP) using a 512-word buffer – 3.0V buffered programming at 1.46 MB/s (TYP) using a 512-word buffer Architecture – MLC: highest density at lowest cost – Symmetrically blocked architecture (512Mb, 1Gb, 2Gb) – Asymmetrically blocked architecture (512Mb, 1Gb); four 32KB parameter blocks: top or bottom configuration – 128KB main blocks – Blank check to verify an erased block Voltage and power – VCC (core) voltage: 2.3–3.6V – VCCQ (I/O) voltage: 2.3–3.6V – Standy current: 70µA (TYP) for 512Mb; 75µA (TYP) for 1Gb – 52 MHz continuous synchronous read current: 21mA (TYP), 24mA (MAX) Security – One-time programmable register: 64 OTP bits, programmed with unique information from Micron; 2112 ...