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IXSH24N60A

IXYS

IGBT

Advance Technical Information HiPerFASTTM IGBT Short Circuit SOA Capability IXSH24N60 IXSH24N60A VCES 600V 600V IC90...


IXYS

IXSH24N60A

File Download Download IXSH24N60A Datasheet


Description
Advance Technical Information HiPerFASTTM IGBT Short Circuit SOA Capability IXSH24N60 IXSH24N60A VCES 600V 600V IC90 24A 24A VCE(sat) 2.2V 2.7V TO-247 (IXSH) Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) P C T J TJM Tstg Md TL TSOLD Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1ms VGE = 15V, TJ = 125°C, RG = 10Ω Clamped inductive load VGE = 15V, VCE = 360V, TJ = 125°C RG = 82Ω, non repetitive TC = 25°C Mounting torque Maximum lead temperature for soldering 1.6mm (0.062 in.) from case for 10s Maximum Ratings 600 600 ±20 ±30 48 24 96 V V V V A A A ICM = 48 @0.8 VCES 10 A V μs 150 -55 ... +150 150 -55 ... +150 1.13 / 10 300 260 6 W °C °C °C Nm/lb.in. °C °C g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVCES V GE(th) IC = 250μA, VCE = VGE IC = 1.5mA, VCE = VGE 600 V 4.0 7.0 V sICES IGES VCE(sat) VCE = 0.8 VCES VGE = 0V TJ = 125°C VCE = 0V, VGE = ±20V IC = 24A, VGE = 15V, Note 1 IXSH24N60 IXSH24N60A 200 μA 1 mA ±100 nA 2.2 V 2.7 V G CE TAB G = Gate E = Emitter C = Collector TAB = Collector Features z International standard package JEDEC TO-247AD z High frequency IGBT with guaranteed Short Circuit SOA Capability z 2nd generation HDMOSTM process z Low VCE(SAT) - for low on-state conduction losses z MOS Gate turn-on - drive simplicity Applications z AC motor speed control z DC servo and robot dr...




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