Power MOSFET
IRFSL9N60A, SiHFSL9N60A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd ...
Description
IRFSL9N60A, SiHFSL9N60A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
600 VGS = 10 V
49 13 20 Single
I2PAK (TO-262)
D
0.75
G
S D G
S N-Channel MOSFET
FEATURES Halogen-free According to IEC 61249-2-21
Definition Low Gate Charge Qg Results in Simple Drive
Requirement Improved Gate, Avalanche and Dynamic
dV/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage
and Current Compliant to RoHS Directive 2002/95/EC
APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptable Power Supply High Speed Power Switching This Device is only for Through Hole Application
APPLICABLE OFF LINE SMPS TOPOLOGIES Active Clamped Forward Main Switch
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
Lead (Pb)-free
I2PAK (TO-262) SiHFSL9N60A-GE3 IRFSL9N60APbF SiHFSL9N60A-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC = 25 °C VGS at 10 V
TC = 100 °C
ID
Pulsed Drain Currenta
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc
TC = 25 °C
EAS IAR EAR PD dV/dt
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction te...
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