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IRFS9N60A

Vishay

Power MOSFET

www.vishay.com IRFS9N60A, SiHFS9N60A Vishay Siliconix Power MOSFET D2PAK (TO-263) GD S D G S N-Channel MOSFET PRODU...


Vishay

IRFS9N60A

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www.vishay.com IRFS9N60A, SiHFS9N60A Vishay Siliconix Power MOSFET D2PAK (TO-263) GD S D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 0.75 49 13 20 Single FEATURES Low gate charge Qg results in simple drive requirement Improved gate, avalanche and dynamic dV/dt ruggedness Fully characterized capacitance and avalanche voltage and current Available Available Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details APPLICATIONS Switch mode power supply (SMPS) Uninterruptible power supply High speed power switching APPLICABLE OFF LINE SMPS TOPOLOGIES Active clamped forward Main switch ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation D2PAK (TO-263) SiHFS9N60A-GE3 IRFS9N60APbF D2PAK (TO-263) SiHFS9N60ATRR-GE3 a IRFS9N60ATRRPbF a ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current a Linear Derating Factor Single Pulse Avalanche Energy b Repetitive Avalanche Current a Repetitive Avalanche Energy a Maximum P...




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