DatasheetsPDF.com

SiHA25N50E Dataheets PDF



Part Number SiHA25N50E
Manufacturers Vishay
Logo Vishay
Description E Series Power MOSFET
Datasheet SiHA25N50E DatasheetSiHA25N50E Datasheet (PDF)

www.vishay.com SiHA25N50E Vishay Siliconix E Series Power MOSFET Thin-Lead TO-220 FULLPAK D G G DS S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 550 VGS = 10 V 86 14 25 Single 0.145 FEATURES • Low figure-of-merit (FOM): Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Low gate charge (Qg) • Avalanche energy rated (UIS) Available • Material categorization: for definiti.

  SiHA25N50E   SiHA25N50E


Document
www.vishay.com SiHA25N50E Vishay Siliconix E Series Power MOSFET Thin-Lead TO-220 FULLPAK D G G DS S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 550 VGS = 10 V 86 14 25 Single 0.145 FEATURES • Low figure-of-merit (FOM): Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Low gate charge (Qg) • Avalanche energy rated (UIS) Available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATONS • Hard switched topologies • Power factor correction power supplies (PFC) • Switch mode power supplies (SMPS) • Computing - PC silver box / ATX power supplies • Lighting - Two stage LED lighting ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and halogen-free Thin-Lead TO-220 FULLPAK SiHA25N50E-E3 SiHA25N50E-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) e Pulsed drain current a Linear derating factor Single pulse avalanche energy b Maximum power dissipation Operating junction and storage temperature range Drain-source voltage slope Reverse diode dV/dt d Soldering recommendations (peak temperature) c VGS at 10 V TC = 25 °C TC = 100 °C VDS = 0 V to 80 % VDS for 10 s VDS VGS ID IDM EAS PD TJ, Tstg dV/dt Mounting torque M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 4.4 A c. 1.6 mm from case d. ISD  ID, dI/dt = 100 A/μs, starting TJ = 25 °C e. Limited by maximum junction temperature THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient Maximum junction-to-case (drain) SYMBOL RthJA RthJC TYP. - LIMIT 500 ± 30 26 16 50 0.2 273 35 -55 to +150 65 25 300 0.6 UNIT V A W/°C mJ W °C V/ns °C Nm MAX. 65 3.6 UNIT °C/W S17-1308-Rev. E, 21-Aug-17 1 Document Number: 91628 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com SiHA25N50E Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. Static Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage (N) Gate-source leakage Zero gate voltage drain current Drain-source on-state resistance Forward transconductance Dynamic VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID = 250 μA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 μA VGS = ± 20 V VGS = ± 30 V VDS = 500 V, VGS = 0 V VDS = 400 V, VGS = 0 V, TJ = 125 °C VGS = 10 V ID = 12 A VDS = 30 V, ID = 12 A 500 - 0.59 2.0 ----- 0.125 - 6.6 Input capacitance Output capacitance Reverse transfer capacitance Effective output capacitance, energy related a Effective output capacitance, time  related b Ciss Coss Crss Co(er) Co(tr) VGS = 0 V, VDS = 100 V, f = 1 MHz VDS = 0 V to 400 V, VGS = 0 V - 1980 - 105 -8 - 105 - 285 Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Rise time Turn-off delay time Fall time Gate input resistance Drain-Source Body Diode Characteristics Qg Qgs Qgd td(on) tr td(off) tf Rg - 57 VGS = 10 V ID = 12 A, VDS = 400 V - 14 25 - 19 VDD = 400 V, ID = 12 A Rg = 9.1 , VGS = 10 V - 36 - 57 - 29 f = 1 MHz, open drain - 0.56 Continuous source-drain diode current Pulsed diode forward current IS MOSFET symbol showing the  integral reverse ISM p - n junction diode D G S --- Diode forward voltage VSD TJ = 25 °C, IS = 16.5 A, VGS = 0 V -- Reverse recovery time Reverse recovery charge Reverse recovery current trr Qrr IRRM TJ = 25 °C, IF = IS, dI/dt = 100 A/μs, VR = 25 V - 338 - 5.3 - 29 Notes a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS MAX. 4.0 ± 100 ±1 1 25 0.145 - - - - 86 38 72 86 58 - 12 50 1.2 - UNIT V V/°C V nA μA μA  S pF nC ns  A V ns μC A S17-1308-Rev. E, 21-Aug-17 2 Document Number: 91628 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) SiHA25N50E Vishay Siliconix ID, Drain-to-Source Current (A) 70 TOP 15 V 14 V TJ = 25 °C 13 V 60 12 V 11 V 10 V 50 9V 8V 7V 6V 40 BOTTOM 5 V 30 20 10 0 0 5 10 15 20 25 VDS, Drain-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics 30 40 TOP 15 V 14 V 13 V 12 V 11.


IXTH24N50L SiHA25N50E MPSU06


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)