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SiHA25N50E
Vishay Siliconix
E Series Power MOSFET
Thin-Lead TO-220 FULLPAK
D
G
G DS
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) max. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
550 VGS = 10 V
86 14 25 Single
0.145
FEATURES
• Low figure-of-merit (FOM): Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses
• Low gate charge (Qg) • Avalanche energy rated (UIS)
Available
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
APPLICATONS • Hard switched topologies • Power factor correction power supplies (PFC) • Switch mode power supplies (SMPS) • Computing
- PC silver box / ATX power supplies • Lighting
- Two stage LED lighting
ORDERING INFORMATION
Package Lead (Pb)-free Lead (Pb)-free and halogen-free
Thin-Lead TO-220 FULLPAK SiHA25N50E-E3 SiHA25N50E-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage Gate-source voltage
Continuous drain current (TJ = 150 °C) e
Pulsed drain current a Linear derating factor Single pulse avalanche energy b Maximum power dissipation Operating junction and storage temperature range Drain-source voltage slope Reverse diode dV/dt d Soldering recommendations (peak temperature) c
VGS at 10 V
TC = 25 °C TC = 100 °C
VDS = 0 V to 80 % VDS for 10 s
VDS VGS
ID
IDM
EAS PD TJ, Tstg
dV/dt
Mounting torque
M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 4.4 A c. 1.6 mm from case d. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C e. Limited by maximum junction temperature
THERMAL RESISTANCE RATINGS
PARAMETER Maximum junction-to-ambient Maximum junction-to-case (drain)
SYMBOL RthJA RthJC
TYP. -
LIMIT 500 ± 30 26 16 50 0.2 273 35
-55 to +150 65 25 300 0.6
UNIT V
A
W/°C mJ W °C V/ns °C Nm
MAX. 65 3.6
UNIT °C/W
S17-1308-Rev. E, 21-Aug-17
1
Document Number: 91628
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
SiHA25N50E
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP.
Static
Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage (N)
Gate-source leakage
Zero gate voltage drain current
Drain-source on-state resistance Forward transconductance Dynamic
VDS VDS/TJ VGS(th)
IGSS
IDSS
RDS(on) gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VGS = ± 30 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 12 A
VDS = 30 V, ID = 12 A
500 - 0.59
2.0 ----- 0.125 - 6.6
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance, energy related a
Effective output capacitance, time related b
Ciss Coss Crss Co(er)
Co(tr)
VGS = 0 V, VDS = 100 V,
f = 1 MHz
VDS = 0 V to 400 V, VGS = 0 V
- 1980 - 105 -8 - 105
- 285
Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Rise time Turn-off delay time Fall time Gate input resistance Drain-Source Body Diode Characteristics
Qg Qgs Qgd td(on) tr td(off)
tf Rg
- 57
VGS = 10 V
ID = 12 A, VDS = 400 V
-
14 25
- 19
VDD = 400 V, ID = 12 A Rg = 9.1 , VGS = 10 V
- 36 - 57
- 29
f = 1 MHz, open drain
- 0.56
Continuous source-drain diode current Pulsed diode forward current
IS
MOSFET symbol showing the
integral reverse ISM p - n junction diode
D
G S
---
Diode forward voltage
VSD
TJ = 25 °C, IS = 16.5 A, VGS = 0 V
--
Reverse recovery time Reverse recovery charge Reverse recovery current
trr Qrr IRRM
TJ = 25 °C, IF = IS, dI/dt = 100 A/μs, VR = 25 V
- 338 - 5.3 - 29
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS
MAX.
4.0 ± 100 ±1 1 25 0.145 -
-
-
-
86 38 72 86 58 -
12
50
1.2 -
UNIT V
V/°C V nA μA μA S
pF
nC
ns
A
V ns μC A
S17-1308-Rev. E, 21-Aug-17
2
Document Number: 91628
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SiHA25N50E
Vishay Siliconix
ID, Drain-to-Source Current (A)
70
TOP
15 V 14 V
TJ = 25 °C
13 V
60 12 V
11 V
10 V
50
9V 8V
7V
6V
40 BOTTOM 5 V
30
20
10
0 0 5 10 15 20 25 VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
30
40
TOP 15 V
14 V
13 V
12 V
11.