MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™E6600V
600VCoolMOS™E6PowerTransistor IPx60R600E6
...
MOSFET
MetalOxideSemiconductorFieldEffect
Transistor
CoolMOS™E6600V
600VCoolMOS™E6Power
Transistor IPx60R600E6
DataSheet
Rev.2.2 Final
PowerManagement&Multimarket
600V CoolMOS" E6 Power
Transistor
1 Description
CoolMOS" is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS" E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Features Extremely low losses due to very low FOM Rdson*Qg and Eoss Very high commutation ruggedness Easy to use/drive JEDEC1) qualified, Pb-free plating, halogen free (excluding
TO-252)
Applications PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS.
IPD60R600E6, IPP60R600E6 IPA60R600E6
drain pin 2
gate pin 1
source pin 3
Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.
Table 1 Key Performance Parameters
Parameter
Value
Unit
VDS @ Tj,max RDS(on),max Qg,typ ID,pulse Eoss @ 400V Body diode di/dt
650 0.6 20.5 19 1.9 500
V ! nC A µJ A/µs
Type / Ordering Code IPD60R600...