Document
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™E6600V
600VCoolMOS™E6PowerTransistor IPx60R280E6
DataSheet
Rev.2.2 Final
PowerManagement&Multimarket
600V CoolMOS" E6 Power Transistor
IPP60R280E6, IPA60R280E6 IPW60R280E6
1 Description
CoolMOS" is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS" E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Features
• Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to use/drive • JEDEC1) qualified, Pb-free plating, Halogen free
Applications
PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS.
Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.
Table 1 Key Performance Parameters
Parameter
Value
Unit
VDS @ Tj,max RDS(on),max Qg,typ ID,pulse Eoss @ 400V Body diode di/dt
650 0.28 43 40 3.7 500
V ! nC A µJ A/µs
drain pin 2
gate pin 1
source pin 3
Type / Ordering Code IPW60R280E6 IPP60R280E6 IPA60R280E6
Package PG-TO247 PG-TO220 PG-TO220 FullPAK
Marking 6R280E6
Related Links IFX CoolMOS Webpage IFX Design tools
1) J-STD20 and JESD22 Final Data Sheet
2
Rev. 2.2, 2014-12-09
600V CoolMOS" E6 Power Transistor IPx60R280E6
Table of Contents
Table of Contents
1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 7 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 8 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Final Data Sheet
3 Rev. 2.2, 2014-12-09
600V CoolMOS" E6 Power Transistor IPx60R280E6
Maximum ratings
2 Maximum ratings
at Tj = 25 °C, unless otherwise specified.
Table 2 Maximum ratings Parameter
Symbol
Continuous drain current1)
Pulsed drain current2) Avalanche energy, single pulse
Avalanche energy, repetitive Avalanche current, repetitive MOSFET dv/dt ruggedness Gate source voltage
ID
ID,pulse EAS
EAR IAR dv/dt VGS
Power dissipation for TO-220, TO-247, TO-262, TO-263
Power dissipation for TO-220 FullPAK
Operating and storage temperature
Mounting torque TO-220, TO-247
Mounting torque TO-220 FullPAK
Continuous diode forward current Diode pulse current2) Reverse diode dv/dt3)
Ptot Ptot Tj,Tstg
IS IS,pulse dv/dt
Min. -
-
Values Typ. Max. - 13.8
8.7 - 40 - 284
----20 -30 --
0.43 2.4 50 20 30 104
- - 32
-55 --
150 60
50
- - 12 - - 40 - - 15
Maximum diode commutation speed3)
dif/dt
1) Limited by Tj,max. Maximum duty cycle D=0.75 2) Pulse width tp limited by Tj,max 3) Identical low side and high side switch with identical RG
500
Unit Note / Test Condition
A
A mJ
A V/ns V
W
TC= 25 °C TC= 100°C TC=25 °C ID=2.4 A,VDD=50 V (see table 21) ID=2.4 A,VDD=50 V
VDS=0...480 V static AC (f>1 Hz) TC=25 °C
°C Ncm M3 and M3.5 screws
M2.5 screws
A A V/ns
A/µs
TC=25 °C TC=25 °C
VDS=0...400 V,ISD " ID,
Tj=25 °C
(see table 22)
Final Data Sheet
4 Rev. 2.2, 2014-12-09
3 Thermal characteristics
600V CoolMOS" E6 Power Transistor IPx60R280E6
Thermal characteristics
Table 3 Thermal characteristics TO-220 (IPP60R280E6),TO-247 (IPW60R280E6)
Parameter
Symbol Min.
Values
Typ.
Max.
Unit Note / Test Condition
Thermal resistance, junction - case RthJC
-
-
1.2 °C/W
Thermal resistance, junction -
RthJA
-
-
62
ambient
leaded
Soldering temperature,
Tsold
-
-
260 °C 1.6 mm (0.063 in.)
wavesoldering only allowed at
from case for 10 s
leads
Table 4.