SPW47N65C3

CoolMOSTM Power Transistor Features Worldwide best R ds,on in TO247 Low gate charge Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max Q g,typ SPW47N65C3 650 V 0.07 Ω 255 nC PG-TO247-3-1 Type SPW47N65C3 Package PG-TO247-3-1 Marking 47N65C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2) Avalanche energy, single pulse ID I D,pulse E AS T C=25 °C T C=100 °C T C=25 °C I D=3.5 A, V DD=50 V Avalanche energy, repetitive t 2),3) AR E AR I D=7 A, V DD=50 V Avalanche current, repetitive t 2),3) AR I AR MOSFET dv /dt ruggedness Gate source voltage dv /dt V GS V DS=0...480 V static AC (f >1 Hz) Power dissipation Operating and storage temperature Mounting torque P tot T C=25 °C T j, T stg M3 and M3.5 screws Value 47 30 141 1800 1 7 50 ±20 ±30 415 -55 ... 150 60 Unit A mJ A V/ns V W °C Ncm Rev. 1.2 page 1 2008-02-12 Please note the new package dimensions arccording to PCN 2009-134-A Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current2) Symbol Conditions IS I S,pulse T C=25 °C SPW47N65C3 Value 47 141 Unit A Parameter Thermal characteristics Symbol Conditions min. Values typ. Unit max. Thermal resistance, junction - case Thermal resistance, junction ambien...