KTA968A

SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE APPLICATION. FEATURES ᴌHigh Transition Frequency : fT=100MHz(Typ.). ᴌComplementary to KTC2238/A. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage KTA968 KTA968A VCBO Collector-Emitter Voltage KTA968 KTA968A VCEO Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation (Tc=25ᴱ) Junction Temperature Storage Temperature Range VEBO IC IE PC Tj Tstg RATING -160 -180 -160 -180 -5 -1.5 1.5 25 150 -55ᴕ150 UNIT V V V A A W ᴱ ᴱ H E Q KTA968/A EPITAXIAL PLANAR PNP TRANSISTOR A R S F B D T L CC MM K 123 J 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER O NG P DIM A B C D E F G H J K L M N O P Q R S T MILLIMETERS 10.30 MAX 15.30 MAX 0.80 Φ3.60 +_ 0.20 3.00 6.70 MAX 13.60+_ 0.50 5.60 MAX 1.37 MAX 0.50 1.50 MAX 2.54 4.70 MAX 2.60 1.50 MAX 1.50 9.50+_ 0.20 8.00+_ 0.20 2.90 MAX TO-220AB ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage KTA968 KTA968A ICBO IEBO V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO DC Current Gain hFE(Note) Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Voltage VBE Transition Frequency fT Collector Output Capacitance Cob Note : hFE Classification 0:70ᴕ140, Y:120ᴕ240 TEST CONDITION VCB=-160V, IE=0 VEB=-5V, IC=0 IC=-10mA, IB=0 IE=-1mA, IC=0 VCE=-5V, IC=-100mA IC=-500mA, IB=-50mA VCE=-5V, IC=-500mA VCE=-10V, IC=-100mA VCB=-10V, IE=0, f=1MH...