Power MOSFET
Polar2TM HiPerFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK94N50P2 IXFX94N50P...
Description
Polar2TM HiPerFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK94N50P2 IXFX94N50P2
VDSS = ID25 =
RDS(on) ≤
500V 94A 55mΩ
TO-264 (IXFK)
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dV/dt
TJ TJM Tstg TL TSOLD Md FC Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force (PLUS247) TO-264 PLUS247
Maximum Ratings
500 500
V V
± 30 V ± 40 V
94 A 240 A
94 A 3.5 J
1300
W
30 V/ns
-55 ... +150 150
-55 ... +150
°C °C °C
300 260
1.13/10 20..120 /4.5..27
°C °C
Nm/lb.in.
N/lb.
10 g 6g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS VGS = ± 30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
Characteristic Values Min. Typ. Max. 500 V
3.0 5.0 V
± 200 nA
10 μA 2 mA
55 mΩ
G D S
PLUS247 (IXFX)
Tab
G DS
Tab
G = Gate S = Source
D = Drain Tab = Drain
Features
z Fast Intrinsic Diode z Dynamic dv/dt Rating z Avalanche Rated z Low RDS(ON) and QG z Low Package Inductance
Advantages
z High Power Density z Easy to Mount z Space Savings
Applications
z Switch-Mode and Resonant-Mode Power Supplies
z DC-DC Converters z Battery Chargers z Uninterrupted Power Supplies z AC and DC Mo...
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