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IXFK94N50P2

IXYS Corporation

Power MOSFET

Polar2TM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK94N50P2 IXFX94N50P...


IXYS Corporation

IXFK94N50P2

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Polar2TM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK94N50P2 IXFX94N50P2 VDSS = ID25 = RDS(on) ≤ 500V 94A 55mΩ TO-264 (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force (PLUS247) TO-264 PLUS247 Maximum Ratings 500 500 V V ± 30 V ± 40 V 94 A 240 A 94 A 3.5 J 1300 W 30 V/ns -55 ... +150 150 -55 ... +150 °C °C °C 300 260 1.13/10 20..120 /4.5..27 °C °C Nm/lb.in. N/lb. 10 g 6g Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 8mA IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.5 ID25, Note 1 Characteristic Values Min. Typ. Max. 500 V 3.0 5.0 V ± 200 nA 10 μA 2 mA 55 mΩ G D S PLUS247 (IXFX) Tab G DS Tab G = Gate S = Source D = Drain Tab = Drain Features z Fast Intrinsic Diode z Dynamic dv/dt Rating z Avalanche Rated z Low RDS(ON) and QG z Low Package Inductance Advantages z High Power Density z Easy to Mount z Space Savings Applications z Switch-Mode and Resonant-Mode Power Supplies z DC-DC Converters z Battery Chargers z Uninterrupted Power Supplies z AC and DC Mo...




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