KTC2800

SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE APPLICATION. FEATURES ᴌHigh Transition Frequency : fT=100MHz(Typ.). ᴌComplementary to KTA1700. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current VCBO VCEO VEBO IC IB Collector Power Dissipation Ta=25ᴱ Tc=25ᴱ PC Junction Temperature Tj Storage Temperature Range Tstg RATING 160 160 5 1.5 1.0 1.5 10 150 -55ᴕ150 UNIT V V V A A W ᴱ ᴱ KTC2800 EPITAXIAL PLANAR NPN TRANSISTOR A B C H J K D E F G L M N 12 3 O P 1. EMITTER 2. COLLECTOR 3. BASE DIM A B C D E F G H J K L M N O P MILLIMETERS 8.3 MAX 5.8 0.7 Φ3.1+_ 0.1 3.5 11.0 +_ 0.3 2.9 MAX 1.0 MAX 1.9 MAX 0.75+_ 0.15 14.0 MIN 2.3+_ 0.1 0.75+_ 0.15 1.6 3.4 MAX TO-126 ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency ICBO IEBO V(BR)CEO V(BR)EBO hFE(Note) VCE(sat) VBE fT Collector Output Capacitance Cob Note: hFE Classification O:70ᴕ140 , Y:120ᴕ240 TEST CONDITION VCB=160V, IE=0 VEB=5V, IC=0 IC=10mA, IB=0 IE=1mA, IC=0 VCE=5V, IC=100mA IC=500mA, IB=50mA VCE=5V, IC=500mA VCE=10V, IC=100mA VCB=10V, IE=0, f=1MHz MIN. - 160 5.0 70 - TYP. - 100 25 MAX. 1.0 1.0 240 1.5 1.0 - UNIT ỌA ỌA V V V V MHz pF 1998. 10. 31 Revision No : 1 1/3 COLLECTOR CURRENT I C (...