KTC200

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ᴌExcellent hFE Linearity : hFE(2)=25(Min.), (VCE=2V, IC=200mA). ᴌComplementary to KTA200. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IE PC Tj Tstg RATING 60 45 5 500 -500 625 150 -55ᴕ150 UNIT V V V mA mA mW ᴱ ᴱ L M C KTC200 EPITAXIAL PLANAR NPN TRANSISTOR BC JA K E G D H FF 1 23 N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00 1. EMITTER 2. COLLECTOR 3. BASE TO-92 ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emittter Voltage Transition Frequency ICBO IEBO hFE(1) (Note) hFE(2) VCE(sat) VBE fT Collector Output Capacitance Cob Note : hFE Classification O:70ᴕ140, Y:120ᴕ240 TEST CONDITION VCB=50V, IE=0 VEB=5V, IC=0 VCE=2V, IC=50mA VCE=2V, IC=200mA IC=100mA, IB=10mA VCE=2V, IC=200mA VCE=6V, IC=20mA VCB=6V, IE=0, f=1MHz MIN. 70 25 - TYP. - 300 7.0 MAX. 0.1 0.1 240 0.25 1.0 - UNIT ỌA ỌA V V MHz pF 1995. 1. 23 Revision No : 0 1/2 COLLECTOR CURRENT I C (mA) KTC200 I C - VCE 500 400 5.0mA 4.0mA 300 COMMON EMITTER Ta=25 C 3.0mA 2.0mA 200 1.0mA 100 0.5mA 0mA...