STGWT40V60DF

STGFW40V60DF, STGW40V60DF, STGWT40V60DF Datasheet Trench gate field-stop IGBT, V series 600 V, 40 A very high speed 1 3 2 1 TO-3PF TAB 3 2 1 TO-247 TO-3P 3 2 1 C(2, TAB) G(1) Features Maximum junction temperature: TJ = 175 °C Tail-less switching off VCE(sat) = 1.8 V (typ.) @ IC = 40 A Tight parameters distribution Safe paralleling Low thermal resistance Very fast soft recovery antiparallel diode Applications Welding Power factor correction UPS Solar inverters Chargers E(3) NG1E3C2T Description These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status links STGFW40V60DF STGW40V60DF STGWT40V60DF DS9556 - Rev 10 - March 2020 For further information contact your local STMicroelectronics sales office. www.st.com STGFW40V60DF, STGW40V60DF, STGWT40V60DF Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCES Collector-emitter voltage (VGE = 0 V) Continuous collector current at TC = 25 °C IC Continuous collector current at TC = 100 °C ICP(1) Pulsed collector current VGE Gate-emitter voltage Continuous forward current at TC = 25 °...