STGW40S120DF3

STGW40S120DF3, STGWA40S120DF3 Trench gate field-stop IGBT, S series 1200 V, 40 A low drop Datasheet - production data    72 72ORQJOHDGV Figure 1. Internal schematic diagram &RU7$% Features 10 µs of short-circuit withstand time VCE(sat) = 1.65 V (typ.) @ IC = 40 A Tight parameter distribution Safer paralleling Low thermal resistance Soft and fast recovery antiparallel diode Applications Industrial drives UPS Solar Welding * ( Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the S series of 1200 V IGBTs which is tailored to maximize efficiency of low frequency industrial systems. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Order code STGW40S120DF3 STGWA40S120DF3 Table 1. Device summary Marking Package G40S120DF3 TO-247 G40S120DF3 TO-247 long leads Packing Tube Tube December 2014 This is information on a product in full production. DocID026373 Rev 2 1/18 www.st.com Contents Contents STGW40S120DF3, STGWA40S120DF3 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . ....