STB40N60M2

STB40N60M2, STP40N60M2, STW40N60M2 N-channel 600 V, 0.078 Ω typ., 34 A MDmesh II Plus™ low Qg 2 Power MOSFETs in D PAK, TO-220 and TO-247 packages Datasheet − production data TAB 2 3 1 D2PAK TAB 3 2 1 TO-220 3 2 1 TO-247 Features Order codes VDS @ TJmax RDS(on) max ID STB40N60M2 STP40N60M2 650 V 0.088 Ω 34 A STW40N60M2 Extremely low gate charge Lower RDS(on) x area vs previous generation Low gate input resistance 100% avalanche tested Zener-protected Figure 1. Internal schematic diagram '7$% Applications Switching applications LLC converters, resonant converters Description * 6 AM01476v1 These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters. Order codes STB40N60M2 STP40N60M2 STW40N60M2 Table 1. Device summary Marking Package 2 D PAK 40N60M2 TO-220 TO-247 Packaging Tape and reel Tube May 2014 This is information on a product in full production. DocID024932 Rev 3 1/21 www.st.com Contents Contents STB40N60M2, STP40N60M2, STW40N60M2 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . ...