Document
Ordering number:EN2911
PNP Epitaxial Planar Silicon Transistor
2SB1396
DC-DC Converter, Motor Driver Applications
Features
· Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Small size making it easy to provide high-density,
small-sized hybrid ICs.
Package Dimensions
unit:mm 2038
[2SB1396]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature
VCBO VCEO VEBO
IC ICP PC Tj
Storage Temperature
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions Mounted on ceramic PCB (250mm2×0.8mm)
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product Output Capacitance
ICBO IEBO hFE1 hFE2
fT Cob
VCB=–12V, IE=0 VEB=–6V, IC=0 VCE=–2V, IC=–0.5A VCE=–2V, IC=–3A VCE=–2V, IC=–0.3A VCB=–10V, f=1MHz
* : The 2SB1396 is classified by 0.5A hFE as follows : 140 S 280 200 T 400 280 U 560 Marking : BO
hFE rank : S, T, U
E : Emitter C : Collector B : Base SANYO : PCP (Bottom view)
Ratings –15 –10 –7 –3 –5 1.3 150
–55 to +150
Unit V V V A A W ˚C ˚C
Ratings min typ
140* 70
400 26
max –100 –100 560*
Unit nA nA
MHz pF
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1598HA (KT)/D168MO, TS No.2911–1/3
Parameter
Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage
2SB1396
Symbol
Conditions
VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO
IC=–1.5A, IB=–30mA IC=–1.5A, IB=–30mA IC=–10µA, IE=0 IC=–1mA, RBE=∞ IE=–10µA, IC=0
Ratings min typ
–220 –0.9 –15 –10 –7
max –400 –1.2
Unit
mV V V V V
No.2911–2/3
2SB1396
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of th.