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B1396 Dataheets PDF



Part Number B1396
Manufacturers Sanyo
Logo Sanyo
Description PNP Epitaxial Planar Silicon Transistor
Datasheet B1396 DatasheetB1396 Datasheet (PDF)

Ordering number:EN2911 PNP Epitaxial Planar Silicon Transistor 2SB1396 DC-DC Converter, Motor Driver Applications Features · Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Small size making it easy to provide high-density, small-sized hybrid ICs. Package Dimensions unit:mm 2038 [2SB1396] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base .

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Ordering number:EN2911 PNP Epitaxial Planar Silicon Transistor 2SB1396 DC-DC Converter, Motor Driver Applications Features · Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Small size making it easy to provide high-density, small-sized hybrid ICs. Package Dimensions unit:mm 2038 [2SB1396] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEBO IC ICP PC Tj Storage Temperature Tstg Electrical Characteristics at Ta = 25˚C Conditions Mounted on ceramic PCB (250mm2×0.8mm) Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance ICBO IEBO hFE1 hFE2 fT Cob VCB=–12V, IE=0 VEB=–6V, IC=0 VCE=–2V, IC=–0.5A VCE=–2V, IC=–3A VCE=–2V, IC=–0.3A VCB=–10V, f=1MHz * : The 2SB1396 is classified by 0.5A hFE as follows : 140 S 280 200 T 400 280 U 560 Marking : BO hFE rank : S, T, U E : Emitter C : Collector B : Base SANYO : PCP (Bottom view) Ratings –15 –10 –7 –3 –5 1.3 150 –55 to +150 Unit V V V A A W ˚C ˚C Ratings min typ 140* 70 400 26 max –100 –100 560* Unit nA nA MHz pF Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O1598HA (KT)/D168MO, TS No.2911–1/3 Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage 2SB1396 Symbol Conditions VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO IC=–1.5A, IB=–30mA IC=–1.5A, IB=–30mA IC=–10µA, IE=0 IC=–1mA, RBE=∞ IE=–10µA, IC=0 Ratings min typ –220 –0.9 –15 –10 –7 max –400 –1.2 Unit mV V V V V No.2911–2/3 2SB1396 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of th.


D1935 B1396 B1223


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