D1825 Transistors Datasheet

D1825 Datasheet, PDF, Equivalent


Part Number

D1825

Description

PNP/NPN Epitaxial Planar Silicon Darlington Transistors

Manufacture

Sanyo

Total Page 4 Pages
Datasheet
Download D1825 Datasheet


D1825
Ordering number:EN2209C
PNP/NPN Epitaxial Planar Silicon Darlington Transistors
2SB1223/2SD1825
Driver Applications
Applications
· Suitable for use in control of motor drivers, printer
hammer drivers, and constant-voltage regulators.
Features
· High DC current gain.
· Large current capacity and wide ASO.
· Micaless package facilitating mounting.
Package Dimensions
unit:mm
2041A
[2SB1223/2SD1825]
( ) : 2SB1223
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Symbol
Conditions
ICBO
IEBO
hFE
fT
VCE(sat)
VCB=(–)40V, IE=0
VEB=(–)5V, IC=0
VCE=(–)2V, IC=(–)2A
VCE=(–)5V, IC=(–)2A
IC=(–)2A, IB=(–)4mA
Base-to-Emitter Saturation Voltage
VBE(sat) IC=(–)2A, IB=(–)4mA
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
Ratings
(–)70
(–)60
(–)6
(–)4
(–)6
2.0
20
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Ratings
min typ
2000
5000
20
0.9
(–1.0)
max
(–)0.1
(–)3.0
(–)1.5
(–)2.0
Unit
mA
mA
MHz
V
V
V
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92098HA (KT)/80796TS (KOTO) 8-9896/2047KI, TS No.2209–1/4

D1825
Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Switching Time Test Circuit
2SB1223/2SD1825
Symbol
Conditions
V(BR)CBO
V(BR)CEO
ton
IC=(–)5mA, IE=0
IC=(–)50mA, RBE=
See specified Test Circuit
tstg See specified Test Circuit
tf See specified Test Circuit
Electrical Connection
Ratings
min typ
(–)70
(–)60
0.6
(0.5)
2.7
(1.4)
1.6
(1.2)
max
Unit
V
V
µs
µs
µs
µs
µs
µs
No.2209–2/4


Features Ordering number:EN2209C PNP/NPN Epitaxi al Planar Silicon Darlington Transistor s 2SB1223/2SD1825 Driver Applications Applications · Suitable for use in con trol of motor drivers, printer hammer d rivers, and constant-voltage regulators . Features · High DC current gain. · Large current capacity and wide ASO. · Micaless package facilitating mounting . Package Dimensions unit:mm 2041A [2S B1223/2SD1825] ( ) : 2SB1223 Specific ations Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Vo ltage Collector-to-Emitter Voltage Emit ter-to-Base Voltage Collector Current C ollector Current (Pulse) Collector Diss ipation Symbol VCBO VCEO VEBO IC ICP P C Junction Temperature Storage Tempera ture Tj Tstg Electrical Characteristi cs at Ta = 25˚C Tc=25˚C Conditions Parameter Collector Cutoff Current Emi tter Cutoff Current DC Current Gain Gai n-Bandwidth Product Collector-to-Emitte r Saturation Voltage Symbol Condition s ICBO IEBO hFE fT VCE(sat) VCB=(–)40V, IE=0 VEB=(–)5V, IC=0 VCE=(–).
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