2SD1816

2SB1216, 2SD1816 Bipolar Transistor (−)100V, (−)4A, Low VCE(sat), (PNP)NPN Single www.onsemi.com Features Low Collector to Emitter Saturation Voltage Small and Slim Package Facilitating Compactness of Sets High fT Good Linearity of hFE Fast Switching Time Typical Applications Suitable for Relay Drivers High Speed Inverters Converters Other General High Current Switching Applications ELECTRICAL CONNECTION 2,4 2,4 1 3 2SB1216 1 3 2SD1816 MARKING 1 : Base 2 : Collector 3 : Emitter 4 : Collector SPECIFICATIONS ( ) : 2SB1216 ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1) Parameter Symbol Value Unit Collector to Base Voltage VCBO (−) 120 V Collector to Emitter Voltage VCEO (−) 100 V Emitter to Base Voltage VEBO (−) 6 V Collector Current IC (−) 4 A Collector Current (Pulse) ICP (−) 8 A Collector Dissipation Tc=25°C PC 1 W 20 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. B1216 D1816 RANK LOT No. RANK LOT No. 4 1 2 IPAK / TP 3 4 2 1 3 DPAK / TP-FA ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. © Semiconductor Components Industries, LLC, 2016 1 March 2016 - Rev. 2 Publication Order Number : 2SB1216_2SD1816/D ...