D1840

Ordering number : EN3259A 2SB1230 / 2SD1840 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SB1230 / 2SD1840 High-Current Switching Applications Applications Motor drivers, relay drivers, converters and other general high-current switching applications. Features Large current capacity and wide ASO. Low saturation voltage. Specifications ( ) : 2SB1230 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25°C Electrical Characteristics at Ta=25°C Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-to-Emitter Saturation Voltage Base-to-Emitterr Saturation Voltage Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) Conditions VCB=(--)100V, IE=0A VEB=(--)5V, IC=0A VCE=(--)2V, IC=(--)1.5A VCE=(--)2V, IC=(--)6A IC=(--)6A, IB=(--)0.6A IC=(--)6A, IB=(--)0.6A * : For the hFE1 of the 2SB1230 / 2SD1840, specify two ranks or more in principle. Rank P Q hFE 50 to 100 70 to 140 Ratings (--)110 (--)100 (--)6 (--)15 (--)25 (--)5 3.0 100 150 --55 to +150 Unit V V V A A A W W °C °C min 50* 20 Ratings typ max (--)0.1 (--)0.1 140* Unit mA mA (--)0.8 V (--)1.5 V Continued on next page. Any and all SANYO Semiconductor products described or contained herein do n...