Ordering number:EN2266A
PNP/NPN Epitaxial Planar Type Silicon Transistors
2SB1270/2SD1906
High-Current Switching Applic...
Ordering number:EN2266A
PNP/
NPN Epitaxial Planar Type Silicon
Transistors
2SB1270/2SD1906
High-Current Switching Applications
Applications
· Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching applications.
Features
· Suitable for sets whose height is restricted. · Low collector to emitter saturation voltage. · Large current capacity.
Package Dimensions
unit:mm 2049B
[2SB1270/2SD1906]
( ) : 2SB1270
Specifications
E : Emitter C : Collector B : Base SANYO :TO-220MF
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Tc=25˚C
Conditions
Ratings (–)90 (–)80 (–)6 (–)5 (–)9 1.65 30 150
–55 to +150
Unit V V V A A W W ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage
Symbol
Conditions
ICBO IEBO hFE1 hFE2
fT VCE(sat)
VCB=(–)80V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)1A VCE=(–)2V, IC=(–)3A VCE=(–)5V, IC=(–)1A IC=(–)3A, IB=(–)0.3A
Ratings min typ
70* 30
20
max (–)0.1 (–)0.1
280*
0.4 (–0.5)
Unit mA mA
MHz V V
* : The 2SB1270/2SD1906 are classified by 1A hFE as follows : 70 Q 140 100 R 200 140 S 280
Any and all SANYO products described or contained herein do not have...
