MT3245

® MOS-TECH Semiconductor Co.,LTD 07 N-Channel Power MOSFET 4V, A, mΩ Features RDS(on) = 3mΩ (Typ.)@ VGS = 10V, ID = 80A Qg(tot) = 345nC (Typ.)@ VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) RoHS Compliant January 2010 Application Automotive Engine Control Powertrain Management Motors, Solenoids Electronic Steering Integrated Starter/ Alternator Distributed Power Architectures and VRMs Primary Switch for 12V Systems D GDS TO-220  G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol Parameter VDSS VGSS ID IDM EAS PD Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous Continuous Continuous (TC (TC (TC = = = 25oC, Silicon Limited) 100oC, Silicon Limited) 25oC, Package Limited) - Pulsed (Note 1) Single Pulsed Avalanche Energy Power Dissipation (TC = 25oC) - Derate above 25oC (Note 2) TJ...