OptiMOS®2 Power-Transistor
Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for tar...
OptiMOS®2 Power-
Transistor
Features Ideal for high-frequency dc/dc converters Qualified according to JEDEC1) for target application
N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Superior thermal resistance 175 °C operating temperature Pb-free lead plating; RoHS compliant
IPD09N03LA G IPF09N03LA G IPS09N03LA G IPU09N03LA G
Product Summary V DS R DS(on),max (SMD version) ID
25 V 8.6 mΩ 50 A
Type
IPD09N03LA
IPF09N03LA
IPS09N03LA
IPU09N03LA
Package Marking
P-TO252-3-11 09N03LA
P-TO252-3-23 09N03LA
P-TO251-3-11 09N03LA
P-TO251-3-1 09N03LA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current Avalanche energy, single pulse
ID
I D,pulse E AS
T C=25 °C2) T C=100 °C T C=25 °C3) I D=45 A, R GS=25 Ω
Reverse diode dv /dt
dv /dt
I D=50 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C
Gate source voltage4)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value 50 45 350 75
6
±20 63 -55 ... 175 55/175/56
Unit A
mJ kV/µs V W °C
Rev. 2.0
Downloaded from Elcodis.com electronic components distributor
page 1
2006-05-11
IPD09N03LA G IPF09N03LA G IPS09N03LA G IPU09N03LA G
Parameter
Symbol Conditions
min.
Values typ.
Unit max.
Thermal characteristics
Thermal resistance, junction - case SMD version, device on PCB
R thJC R thJA
minimal footprint 6 cm2 cooling area5)
-
- 2.4 ...