G7PH42U-EP

INSULATED GATE BIPOLAR TRANSISTOR Features Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead -Free Benefits High efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses Rugged transient performance for increased reliability Excellent current sharing in parallel operation Applications U.P.S Welding Solar inverter Induction heating C G E n-channel PD - 96233A IRG7PH42UPbF IRG7PH42U-EP VCES = 1200V IC = 60A, TC = 100°C TJ(max) =175°C VCE(on) typ. = 1.7V CC GC E TO-247AC IRG7PH42UPbF GC E TO-247AD IRG7PH42U-EP G Gate C Collector E Emitter Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C INOMINAL ICM ILM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current (Silicon Limited) Continuous Collector Current (Silicon Limited) Nominal Current Pulse Collector Current, VGE = 15V cClamped Inductive Load Current, VGE = 20V Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Thermal Resistance RθJC (IGBT) RθCS RθJA Parameter fThermal Resistance Junction-to-Case-(each IGBT) TO-247AC ...