Document
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Low VCE (ON) trench IGBT technology • Low switching losses • Maximum junction temperature 175 °C • Square RBSOA • 100% of the parts tested for ILM • Positive VCE (ON) temperature co-efficient • Tight parameter distribution • Lead -Free
Benefits
• High efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to
low VCE (ON) and low switching losses • Rugged transient performance for increased reliability • Excellent current sharing in parallel operation
Applications
• U.P.S • Welding • Solar inverter • Induction heating
C
G E
n-channel
PD - 96233A
IRG7PH42UPbF IRG7PH42U-EP
VCES = 1200V IC = 60A, TC = 100°C
TJ(max) =175°C VCE(on) typ. = 1.7V
CC
GC E
TO-247AC IRG7PH42UPbF
GC E
TO-247AD IRG7PH42U-EP
G Gate
C Collector
E Emitter
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C INOMINAL ICM
ILM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG
Collector-to-Emitter Voltage Continuous Collector Current (Silicon Limited) Continuous Collector Current (Silicon Limited) Nominal Current Pulse Collector Current, VGE = 15V
cClamped Inductive Load Current, VGE = 20V
Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC (IGBT) RθCS RθJA
Parameter
fThermal Resistance Junction-to-Case-(each IGBT) TO-247AC fThermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
1
Max. 1200
90g
60 30 90 120 ±30 385 192 -55 to +175
300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m)
Min. ––– ––– –––
Typ. ––– 0.24 40
Max. 0.39 ––– –––
Units V
A
V W °C
Units °C/W
www.irf.com
02/18/10
IRG7PH42UPbF/IRG7PH42U-EP
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES ∆V(BR)CES/∆TJ
Parameter
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
Min. 1200
— — — —
Typ. — 1.2 1.7 2.1 2.2
Max. Units Conditions
e— V VGE = 0V, IC = 100µA e— V/°C VGE = 0V, IC = 1mA (25°C-150°C) d2.0 IC = 30A, VGE = 15V, TJ = 25°C d— V IC = 30A, VGE = 15V, TJ = 150°C d— IC = 30A, VGE = 15V, TJ = 175°C
VGE(th)
Gate Threshold Voltage
3.0 — 6.0 V VCE = VGE, IC = 1mA
∆VGE(th)/∆TJ Threshold Voltage temp. coefficient
— -16 — mV/°C VCE = VGE, IC = 1mA (25°C - 175°C)
gfe Forward Transconductance
— 32 — S VCE = 50V, IC = 30A, PW = 80µs
ICES
Collector-to-Emitter Leakage Current
— —
1 700
150 —
µA
VGE = 0V, VCE = 1200V VGE = 0V, VCE = 1200V, TJ = 175°C
IGES Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Qg Total Gate Charge (turn-on)
Min. Typ. Max. Units
— 157 236
dIC = 30A
Conditions
Qge Gate-to-Emitter Charge (turn-on)
— 21 32 nC VGE = 15V
Qgc Gate-to-Co.