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G7PH42U-EP Dataheets PDF



Part Number G7PH42U-EP
Manufacturers International Rectifier
Logo International Rectifier
Description IRG7PH42U-EP
Datasheet G7PH42U-EP DatasheetG7PH42U-EP Datasheet (PDF)

INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (ON) trench IGBT technology • Low switching losses • Maximum junction temperature 175 °C • Square RBSOA • 100% of the parts tested for ILM • Positive VCE (ON) temperature co-efficient • Tight parameter distribution • Lead -Free Benefits • High efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses • Rugged transient performance for increased reliability • Exc.

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INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (ON) trench IGBT technology • Low switching losses • Maximum junction temperature 175 °C • Square RBSOA • 100% of the parts tested for ILM • Positive VCE (ON) temperature co-efficient • Tight parameter distribution • Lead -Free Benefits • High efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses • Rugged transient performance for increased reliability • Excellent current sharing in parallel operation Applications • U.P.S • Welding • Solar inverter • Induction heating C G E n-channel PD - 96233A IRG7PH42UPbF IRG7PH42U-EP VCES = 1200V IC = 60A, TC = 100°C TJ(max) =175°C VCE(on) typ. = 1.7V CC GC E TO-247AC IRG7PH42UPbF GC E TO-247AD IRG7PH42U-EP G Gate C Collector E Emitter Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C INOMINAL ICM ILM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current (Silicon Limited) Continuous Collector Current (Silicon Limited) Nominal Current Pulse Collector Current, VGE = 15V cClamped Inductive Load Current, VGE = 20V Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Thermal Resistance RθJC (IGBT) RθCS RθJA Parameter fThermal Resistance Junction-to-Case-(each IGBT) TO-247AC fThermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) 1 Max. 1200 90g 60 30 90 120 ±30 385 192 -55 to +175 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Min. ––– ––– ––– Typ. ––– 0.24 40 Max. 0.39 ––– ––– Units V A V W °C Units °C/W www.irf.com 02/18/10 IRG7PH42UPbF/IRG7PH42U-EP Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ∆V(BR)CES/∆TJ Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage VCE(on) Collector-to-Emitter Saturation Voltage Min. 1200 — — — — Typ. — 1.2 1.7 2.1 2.2 Max. Units Conditions e— V VGE = 0V, IC = 100µA e— V/°C VGE = 0V, IC = 1mA (25°C-150°C) d2.0 IC = 30A, VGE = 15V, TJ = 25°C d— V IC = 30A, VGE = 15V, TJ = 150°C d— IC = 30A, VGE = 15V, TJ = 175°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 V VCE = VGE, IC = 1mA ∆VGE(th)/∆TJ Threshold Voltage temp. coefficient — -16 — mV/°C VCE = VGE, IC = 1mA (25°C - 175°C) gfe Forward Transconductance — 32 — S VCE = 50V, IC = 30A, PW = 80µs ICES Collector-to-Emitter Leakage Current — — 1 700 150 — µA VGE = 0V, VCE = 1200V VGE = 0V, VCE = 1200V, TJ = 175°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Total Gate Charge (turn-on) Min. Typ. Max. Units — 157 236 dIC = 30A Conditions Qge Gate-to-Emitter Charge (turn-on) — 21 32 nC VGE = 15V Qgc Gate-to-Co.


TMPA8700CSF G7PH42U-EP 2SC5381


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