IRFB3306GPbF

PD - 96211 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free l Halogen-Free IRFB3306GPbF HEXFET® Power MOSFET D VDSS RDS(on) typ. max. ID (Silicon Limited) 60V 3.3m: 4.2m: c160A S ID (Package Limited) 120A D DS G TO-220AB IRFB3306GPbF G Gate Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C IDM Continuous Drain Current, VGS @ 10V (Wire Bond Limited) dPulsed Drain Current PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage fPeak Diode Recovery TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) IAR EAR eSingle Pulse Avalanche Energy ÃdAvalanche Current dRepetitive Avalanche Energy Thermal Resistance Symbol RθJC Parameter jJunction-to-Case RθCS Case-to-Sink, Flat Greased Surface , TO-220 RθJA Junction-to-Ambient, TO-220 D D ra in S Source Max. ™160 ™110 120 620 230 1.5 ± 20 14 -55 to + 175 300 x x10lbf in (1.1N m) 1...