Document
TIP29, A, B, C (NPN), TIP30, A, B, C (PNP)
Complementary Silicon Plastic Power Transistors
Designed for use in general purpose amplifier and switching applications. Compact TO−220 package.
Features
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector − Emitter Voltage TIP29G, TIP30G TIP29AG, TIP30AG TIP29BG, TIP30BG TIP29CG, TIP30CG
VCEO
40 60 80 100
Vdc
Collector − Base Voltage TIP29G, TIP30G TIP29AG, TIP30AG TIP29BG, TIP30BG TIP29CG, TIP30CG
VCB Vdc 40 60 80 100
Emitter − Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Power Dissipation
@ TC = 25°C Derate above 25°C
VEB 5.0 Vdc IC 1.0 Adc ICM 3.0 Adc IB 0.4 Adc PD
30 W 0.24 W/°C
Total Power Dissipation @ TA = 25°C Derate above 25°C
PD 2.0 W
0.016
W/°C
Unclamped Inductive Load Energy (Note 1)
E
32 mJ
Operating and Storage Junction Temperature Range
TJ, Tstg – 65 to + 150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. This rating based on testing with LC = 20 mH, RBE = 100 W, VCC = 10 V,
IC = 1.8 A, P.R.F = 10 Hz
THERMAL CHARACTERISTICS Characteristic
Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case
Symbol RqJA RqJC
Max 62.5 4.167
Unit °C/W °C/W
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 13
1
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1 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 40, 60, 80, 100 VOLTS,
80 WATTS
PNP
COLLECTOR 2,4
NPN
COLLECTOR 2,4
1 BASE
3 EMITTER
1 BASE
3 EMITTER
4 TO−220
CASE 221A STYLE 1
12 3
MARKING DIAGRAM
TIPxxxG AYWW
TIPxxx
A Y WW G
= Device Code: 29, 29A, 29B, 29C 30, 30A, 30B, 30C
= Assembly Location = Year = Work Week = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of this data sheet.
Publication Order Number: TIP29B/D
TIP29, A, B, C (NPN), TIP30, A, B, C (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage
(IC = 30 mAdc, IB = 0) (Note 2) TIP29G, TIP30G TIP29AG, TIP30AG TIP29BG, TIP30BG TIP29CG, TIP30CG
VCEO(sus)
Vdc
40 − 60 − 80 − 100 −
Collector Cutoff Current (VCE = 30 Vdc, IB = 0) TIP29G, TIP29AG, TIP30G, TIP30AG (VCE = 60 Vdc, IB = 0) TIP29BG, TIP29CG, TIP30BG, TIP30CG
ICEO
− −
mAdc 0.3 0.3
Collector Cutoff Current (VCE = 40 Vdc, VEB = 0) TIP29G, TIP30G (VCE = 60 Vdc, VEB = 0) TIP29AG, TIP30AG (VCE = 80 Vdc, VEB = 0) TIP29BG, TIP30BG (VCE = 100 Vdc, VEB = 0) TIP29CG, TIP30CG
ICES
mAdc
− 200
− 200
− 200
− 200
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
−
mAdc 1.0
ON CHARACTERISTICS (Note 2)
DC Current Gain (IC = 0.2 Adc, VCE = 4.0 Vdc) (IC = 1.0 Adc, VCE = 4.0 Vdc)
hFE 40 15
− 75
−
Collector−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 125 mAdc)
VCE(sat)
−
Vdc 0.7
Base−Emitter On Voltage (IC = 1.0 Adc, VCE = 4.0 Vdc)
VBE(on)
−
Vdc 1.3
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 3) (IC = 200 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
fT MHz 3.0 −
Small−Signal Current Gain (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe 20
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0% 3. fT = ⎪hfe⎪• ftest
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hFE, DC CURRENT GAIN
TIP29, A, B, C (NPN), TIP30, A, B, C (PNP)
500 300 TJ = 150°C
25°C 100 70 - 55°C 50
30
VCE = 2.0 V
10
7.0 5.0
0.03
0.05 0.07 0.1
0.3 0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
Figure 1. DC Current Gain
3.0
t, TIME ( μs)
3.0 2.0
ts′ 1.0 0.7 tf @ VCC = 30 V 0.5
0.3 tf @ VCC = 10 V 0.2
IB1 = IB2 IC/IB = 10 ts′ = ts - 1/8 tf TJ = 25°C
0.1 0.07 0.05
0.03 0.03
0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
Figure 2. Turn−Off Time
2.0 3.0
TURN-ON PULSE APPROX
+11 V
VCC
RC
Vin 0 VEB(off)
APPROX +11 V
Vin
Vin RB
t1
t3 Cjd << Ceb
t1 ≤ 7.0 ns 100 < t2 < 500 ms
t3 < 15 ns
- 4.0 V
SCOPE
t2 TURN-OFF PULSE
DUTY CYCLE ≈ 2.0% APPROX - 9.0 V
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.
Figure 3. Switching Time Equivalent Circuit
t, TIME ( μs)
2.0
1.0 0.7 tr @ VCC = 30 V 0.5
0.3 tr @ VCC = 10 V
IC/IB = 10 TJ = 25°C
0.1 0.07 td @ VEB(off) = 2.0 V 0.05
0.03 0.02
0.03
0.05 0.07 0.1
0.3 0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP) Figure 4. Turn−On Time
3.0
10 TJ = 150°C
3.0 1 ms
dc 0.1
SECOND BREAKDOWN LIMITED
THERMALLY LIMITED @ TC = 25°C BONDING WIRE LIMITED
CURVES APPLY BELOW RATED .