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TIP29B Dataheets PDF



Part Number TIP29B
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Complementary Silicon Plastic Power Transistors
Datasheet TIP29B DatasheetTIP29B Datasheet (PDF)

TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Compact TO−220 package. Features • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage TIP29G, TIP30G TIP29AG, TIP30AG TIP29BG, TIP30BG TIP29CG, TIP30CG VCEO 40 60 80 100 Vdc Collector − Base Voltage TIP29G, TIP30G TIP29AG, TIP30AG TIP29BG, TIP30BG TIP29CG.

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TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Compact TO−220 package. Features • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage TIP29G, TIP30G TIP29AG, TIP30AG TIP29BG, TIP30BG TIP29CG, TIP30CG VCEO 40 60 80 100 Vdc Collector − Base Voltage TIP29G, TIP30G TIP29AG, TIP30AG TIP29BG, TIP30BG TIP29CG, TIP30CG VCB Vdc 40 60 80 100 Emitter − Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Power Dissipation @ TC = 25°C Derate above 25°C VEB 5.0 Vdc IC 1.0 Adc ICM 3.0 Adc IB 0.4 Adc PD 30 W 0.24 W/°C Total Power Dissipation @ TA = 25°C Derate above 25°C PD 2.0 W 0.016 W/°C Unclamped Inductive Load Energy (Note 1) E 32 mJ Operating and Storage Junction Temperature Range TJ, Tstg – 65 to + 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. This rating based on testing with LC = 20 mH, RBE = 100 W, VCC = 10 V, IC = 1.8 A, P.R.F = 10 Hz THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 62.5 4.167 Unit °C/W °C/W *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 November, 2014 − Rev. 13 1 www.onsemi.com 1 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 40, 60, 80, 100 VOLTS, 80 WATTS PNP COLLECTOR 2,4 NPN COLLECTOR 2,4 1 BASE 3 EMITTER 1 BASE 3 EMITTER 4 TO−220 CASE 221A STYLE 1 12 3 MARKING DIAGRAM TIPxxxG AYWW TIPxxx A Y WW G = Device Code: 29, 29A, 29B, 29C 30, 30A, 30B, 30C = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet. Publication Order Number: TIP29B/D TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 30 mAdc, IB = 0) (Note 2) TIP29G, TIP30G TIP29AG, TIP30AG TIP29BG, TIP30BG TIP29CG, TIP30CG VCEO(sus) Vdc 40 − 60 − 80 − 100 − Collector Cutoff Current (VCE = 30 Vdc, IB = 0) TIP29G, TIP29AG, TIP30G, TIP30AG (VCE = 60 Vdc, IB = 0) TIP29BG, TIP29CG, TIP30BG, TIP30CG ICEO − − mAdc 0.3 0.3 Collector Cutoff Current (VCE = 40 Vdc, VEB = 0) TIP29G, TIP30G (VCE = 60 Vdc, VEB = 0) TIP29AG, TIP30AG (VCE = 80 Vdc, VEB = 0) TIP29BG, TIP30BG (VCE = 100 Vdc, VEB = 0) TIP29CG, TIP30CG ICES mAdc − 200 − 200 − 200 − 200 Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − mAdc 1.0 ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 0.2 Adc, VCE = 4.0 Vdc) (IC = 1.0 Adc, VCE = 4.0 Vdc) hFE 40 15 − 75 − Collector−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 125 mAdc) VCE(sat) − Vdc 0.7 Base−Emitter On Voltage (IC = 1.0 Adc, VCE = 4.0 Vdc) VBE(on) − Vdc 1.3 DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (Note 3) (IC = 200 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT MHz 3.0 − Small−Signal Current Gain (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 20 − − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0% 3. fT = ⎪hfe⎪• ftest www.onsemi.com 2 hFE, DC CURRENT GAIN TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) 500 300 TJ = 150°C 25°C 100 70 - 55°C 50 30 VCE = 2.0 V 10 7.0 5.0 0.03 0.05 0.07 0.1 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) Figure 1. DC Current Gain 3.0 t, TIME (  μs) 3.0 2.0 ts′ 1.0 0.7 tf @ VCC = 30 V 0.5 0.3 tf @ VCC = 10 V 0.2 IB1 = IB2 IC/IB = 10 ts′ = ts - 1/8 tf TJ = 25°C 0.1 0.07 0.05 0.03 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) Figure 2. Turn−Off Time 2.0 3.0 TURN-ON PULSE APPROX +11 V VCC RC Vin 0 VEB(off) APPROX +11 V Vin Vin RB t1 t3 Cjd << Ceb t1 ≤ 7.0 ns 100 < t2 < 500 ms t3 < 15 ns - 4.0 V SCOPE t2 TURN-OFF PULSE DUTY CYCLE ≈ 2.0% APPROX - 9.0 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS. Figure 3. Switching Time Equivalent Circuit t, TIME (  μs) 2.0 1.0 0.7 tr @ VCC = 30 V 0.5 0.3 tr @ VCC = 10 V IC/IB = 10 TJ = 25°C 0.1 0.07 td @ VEB(off) = 2.0 V 0.05 0.03 0.02 0.03 0.05 0.07 0.1 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) Figure 4. Turn−On Time 3.0 10 TJ = 150°C 3.0 1 ms dc 0.1 SECOND BREAKDOWN LIMITED THERMALLY LIMITED @ TC = 25°C BONDING WIRE LIMITED CURVES APPLY BELOW RATED .


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