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TIP30

ON Semiconductor

Complementary Silicon Plastic Power Transistors

TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general...


ON Semiconductor

TIP30

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Description
TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Compact TO−220 package. Features These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage TIP29G, TIP30G TIP29AG, TIP30AG TIP29BG, TIP30BG TIP29CG, TIP30CG VCEO 40 60 80 100 Vdc Collector − Base Voltage TIP29G, TIP30G TIP29AG, TIP30AG TIP29BG, TIP30BG TIP29CG, TIP30CG VCB Vdc 40 60 80 100 Emitter − Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Power Dissipation @ TC = 25°C Derate above 25°C VEB 5.0 Vdc IC 1.0 Adc ICM 3.0 Adc IB 0.4 Adc PD 30 W 0.24 W/°C Total Power Dissipation @ TA = 25°C Derate above 25°C PD 2.0 W 0.016 W/°C Unclamped Inductive Load Energy (Note 1) E 32 mJ Operating and Storage Junction Temperature Range TJ, Tstg – 65 to + 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. This rating based on testing with LC = 20 mH, RBE = 100 W, VCC = 10 V, IC = 1.8 A, P.R.F = 10 Hz THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 62.5 4.167 Unit °C/W °C/W *For additional information on our Pb−Free strategy and solderin...




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