TIP29, A, B, C (NPN), TIP30, A, B, C (PNP)
Complementary Silicon Plastic Power Transistors
Designed for use in general...
TIP29, A, B, C (
NPN), TIP30, A, B, C (
PNP)
Complementary Silicon Plastic Power
Transistors
Designed for use in general purpose amplifier and switching applications. Compact TO−220 package.
Features
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector − Emitter Voltage TIP29G, TIP30G TIP29AG, TIP30AG TIP29BG, TIP30BG TIP29CG, TIP30CG
VCEO
40 60 80 100
Vdc
Collector − Base Voltage TIP29G, TIP30G TIP29AG, TIP30AG TIP29BG, TIP30BG TIP29CG, TIP30CG
VCB Vdc 40 60 80 100
Emitter − Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Power Dissipation
@ TC = 25°C Derate above 25°C
VEB 5.0 Vdc IC 1.0 Adc ICM 3.0 Adc IB 0.4 Adc PD
30 W 0.24 W/°C
Total Power Dissipation @ TA = 25°C Derate above 25°C
PD 2.0 W
0.016
W/°C
Unclamped Inductive Load Energy (Note 1)
E
32 mJ
Operating and Storage Junction Temperature Range
TJ, Tstg – 65 to + 150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. This rating based on testing with LC = 20 mH, RBE = 100 W, VCC = 10 V,
IC = 1.8 A, P.R.F = 10 Hz
THERMAL CHARACTERISTICS Characteristic
Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case
Symbol RqJA RqJC
Max 62.5 4.167
Unit °C/W °C/W
*For additional information on our Pb−Free strategy and solderin...