MX516

MX516 PNP Epitaxial Silicon Transistor AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING HIGH CURRENT HIGH POWER TO - 251 Complimentary to MX506 Absolute Maximum Ratings (TA=25oC Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature VCBO VCEO VEBO IC PC TJ -30 V -20 V -6 V -5 A 5W 150 oC 1 1. Base 2.Collector 3.Emitter Electrical Characteristics (TA=25oC) Characteristic Symbol Test Conditions Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Leakage Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage BVCBO BVCEO BVEBO ICBO IEBO ICEO hFE VCE(sat) VBE(sat) IC= -100µA, IE=0 IC= -10mA, IB=0 IE= -100µA, IC=0 VCB= -20V, IC=0 VBE= -6V, IC=0 VCE= -10V, IC=0 VCE= -1V, IC= -500mA IC= -3A, IB= -75mA VCE= -1V, IC= -3A Min Typ Max Unit -30 V -20 V -6 V -0.1 µA -0.1 µA -10 µA 140 600 -0.5 V -1.5 V hFE CLASSIFICATION Classification hFE Y 140 – 280 GR 200 – 400 BL 300 – 600 Elite Enterprises (H.K.) Co., Ltd. Flat 2505, 25/F., Nanyang Plaza, 57 Hung To Road, Kwun Tong, H.K. Tel: (852) 2723-3122 Fax: (852) 2723-3990 Email: info@elite-ent.com.hk Part No.:MX516 Page: 1 / 1 ...