FW202

Ordering number : EN5318A N-Channel Silicon MOSFET FW202 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance unit: mm Ultrahigh-speed switching. 2129-SOP8 Composite type with two 4V-drive N-channel MOSFETs facilitating high-density mounting. Matched pair capability. [FW202] Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions Ratings 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mounted on a ceramic board (1000mm2×0.8mm) 20 ±20 5 48 1.7 2.0 150 –55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter D-S Breakdown Voltage Zero-Gate-Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on) RDS(on) Ciss Coss Crss Conditions ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=5A ID=5A, VGS=10V ID=5A, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz Ratings min 20 typ max 100 ±10 2.5 8 32 48 550 400 130 40 65 Unit V µA µA V S mΩ mΩ...