FW214

Ordering number :EN5850 Features w D . · Low ON resistance. w · 2.5V drive. w a S a t h ee U 4 t . m o c N-Channel Silicon MOS FET FW214 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2129 [FW214] 8 5 5.0 0.595 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Electrical Characteristics at Ta = 25˚C Parameter D-S Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Leak Current Cutoff Current Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Diode Forward Voltage w w w .D Tch Tstg Coss Crss t a PW≤10µs, duty cycle≤1% Mounted on ceramic board (1200mm2×0.8mm) 1unit S a e h 1.27 0.43 0.1 1.5 1.8max 1 t e 4 U 4 .c 0.3 0.2 m o 1:Source1 2:Gate1 3:Source2 4:Gate2 5:Drain2 6:Drain2 7:Drain1 8:Drain1 SANYO:SOP8 4.4 Conditions Ratings 20 ±10 5 48 1.7 2.0 150 –55 to +150 6.0 Unit V V A A W W ˚C ˚C Mounted on ceramic board (1200mm2×0.8mm) Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=5A ID=5A, VGS...