FW232

Ordering number : ENN6618 FW232 N-Channel Silicon MOSFET FW232 Load Switching Applications Features Package Dimensions unit : mm 2129 [FW232] 8 5 0.3 4.4 6.0 0.2 5.0 0.595 1.27 0.43 Low ON-resistance. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1000mm2!0.8mm) 1unit Mounted on a ceramic board (1000mm2!0.8mm) Conditions 0.1 1.5 1.8max 1 4 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 Ratings 30 ±10 8 52 1.7 2.0 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs Conditions ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=± 8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=8A Ratings min 30 1 ±10 0.4 16 22 1.3 typ max Unit V µA µA V S Marking : W232 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can b...