FW241

Ordering number : ENN6939 FW241 N-Channel Silicon MOSFET FW241 Ultrahigh-Speed Swiching Applications Features Package Dimensions 4.4 6.0 0.2 0.3 5.0 This composite device allows high density mounting by unit : mm incorporating two MOSFET chips in one package that 2129 feature low on-resistance, ultrahigh switching speed, and drive voltage of 4.5V. The two chips have near characteristics, and especially 8 suited for HDD. [FW241] 5 1.5 1.8max 1 4 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 0.595 1.27 0.43 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (2000mm2!0.8mm)1unit Tc=25°C Conditions Ratings 30 ± 20 3.5 14 1.4 2.0 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Gate Threshold Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(th) yfs Conditions ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=± 16V, VDS=0 VDS=VGS, ID=250µA VDS=10V, ID=3.5A Ratings min 30 1 ± 10 1.2 3.7 5.3 2.5 typ max Unit V µA µA V S Marking : W241 0.1 Continued on next page. Any and all SANYO products described or contained herein do...