IRFS4127PbF

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free PD - 96177 IRFS4127PbF IRFSL4127PbF HEXFET® Power MOSFET D VDSS 200V :RDS(on) typ. 18.6m max. 22m: S ID 72A DD S G D2Pak IRFS4127PbF S D G TO-262 IRFSL4127PbF G Gate D Drain S Source Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C IDM Continuous Drain Current, VGS @ 10V cPulsed Drain Current PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage ePeak Diode Recovery TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) IAR EAR dSingle Pulse Avalanche Energy cAvalanche Current fRepetitive Avalanche Energy Thermal Resistance Symbol RθJC RθJA Parameter jkJunction-to-Case ijJunction-to-Ambient www.irf.com Max. 72 51 300 375 2.5 ± 20 57 -55 to + 175 300 x x10lb in (1.1N m) 250 See Fig. 14, 15, 22a, 22b, Typ. ––– ––– Max. 0.4 40 Units A W W/°C V V/ns °C mJ A mJ Units °C/W 1 09/16/08 IRFS/SL4127PbF Static @ TJ = 25°C (unless otherwise specified) Symbol ...