Power MOSFET
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switc...
Description
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
G
Benefits l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness l Fully Characterized Capacitance and Avalanche
SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free
PD - 96177
IRFS4127PbF IRFSL4127PbF
HEXFET® Power MOSFET
D VDSS
200V
:RDS(on) typ. 18.6m
max. 22m:
S ID
72A
DD
S G
D2Pak IRFS4127PbF
S D G
TO-262 IRFSL4127PbF
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C IDM
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS dv/dt
Gate-to-Source Voltage
ePeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited) IAR EAR
dSingle Pulse Avalanche Energy cAvalanche Current fRepetitive Avalanche Energy
Thermal Resistance
Symbol RθJC RθJA
Parameter
jkJunction-to-Case ijJunction-to-Ambient
www.irf.com
Max. 72 51 300 375 2.5 ± 20 57
-55 to + 175
300
x x10lb in (1.1N m)
250 See Fig. 14, 15, 22a, 22b,
Typ. ––– –––
Max. 0.4 40
Units
A
W W/°C
V V/ns °C
mJ A mJ
Units °C/W
1
09/16/08
IRFS/SL4127PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
...
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