FW313

Ordering number:ENN6389 N-Channel and P-Channel Silicon MOSFETs FW313 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Composite type with a N-channel MOSFET and a Pchannel MOSFET driving from a 4V supply voltage contained in a single package. · High-density mounting. Package Dimensions unit:mm 2129 [FW313] 8 5 0.3 4.4 6.0 0.2 5.0 1.5 0.595 1.27 0.43 0.1 1.8max 1 4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 Conditions Ratings N-channel 30 ±20 7 P-channel –30 ±20 –5 –20 1.7 2.0 150 –55 to +150 Unit V V A A W W ˚C ˚C PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mounted on a ceramic board (1000mm2×0.8mm) 28 Electrical Characteristics at Ta = 25˚C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=7A ID=7A, VGS=10V ID=4A, VGS=4V 1.0 9 13 25 37 32 50 30 10 ±10 2.4 V µA µA V S mΩ mΩ Symbol C...