Schottky Barrier Diode
RB238T150
Data Sheet
lApplication Switching power supply
lFeatures 1) Cathode common type 2) Hi...
Schottky Barrier Diode
RB238T150
Data Sheet
lApplication Switching power supply
lFeatures 1) Cathode common type 2) High reliability 3) Super low IR
lConstruction Silicon epitaxial planar type
lDimensions (Unit : mm)
4.5±00..31
10.0±
0.3 0.1
f3.2±0.2
2.8±00..21
lStructure
0.4 0.2
15.0±
12.0±0.2
1
1.2 1.3 0.8
2.45±0.5 2.45±0.5
(1) (2) (3)
5.0±0.2
8.0±0.2
14.0±0.5
2.6±0.5
0.75±00..015 ROHM : TO220FN
1 : Manufacture Date
(1) (2) (3) Anode Cathode Anode
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
150 V
Reverse voltage
VR Direct reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Io IFSM
Glass epoxy board mounted, 60Hz half sin wave, resistive load,Tc=85ºC Max., IO/2 per diode 60Hz half sin wave, Non-repetitive at Ta=25ºC, 1cycle, per diode
Operating junction temperature
Tj
-
150 40 100 150
V A A °C
Storage temperature
Tstg
- -55 to +150 °C
lElectrical and Thermal Characteristics (Tj= 25°C)
Parameter
Symbol
Conditions
Forward voltage
VF IF=20A
Reverse current
IR VR=150V
Thermal resistance
Rth(j-c)
Junction to case
Min. Typ. Max. Unit - - 0.87 V - - 30 mA - - 2 °C / W
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1/5
2015.01 - Rev.A
RB238T150 lElectrical Characteristic Curves
Data Sheet
FORWARD CURRENT : IF(A)
100 Tj = 150°C
Tj = 125°C 10 Tj = 75°C
1 Tj = 25°C
0.1
0.01
Tj = -25°C
0.001 0
200 400...