Nch 30V 4.5A Middle Power MOSFET
RF6E045AJ
Nch 30V 4.5A Middle Power MOSFET
VDSS RDS(on)(Max.)
ID PD
30V 23.7mΩ ±4.5A
1W
lFeatures
1) Low on - resis...
Description
RF6E045AJ
Nch 30V 4.5A Middle Power MOSFET
VDSS RDS(on)(Max.)
ID PD
30V 23.7mΩ ±4.5A
1W
lFeatures
1) Low on - resistance. 2) High Power Package (TUMT6). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free.
lOutline
TUMT6
lInner circuit
Datasheet
lPackaging specifications Packing
Embossed Tape
Reel size (mm)
180
lApplication Switching
Type Tape width (mm) Basic ordering unit (pcs)
8 3000
Taping code
TCR
Marking
CJ
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Power dissipation Junction temperature Range of storage temperature
VDSS ID
ID,pulse*1 VGSS PD*2
Tj Tstg
30 ±4.5 ±18 ±12
1 150 -55 to +150
V A A V W
℃ ℃
www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved.
1/11
20150403 - Rev.002
RF6E045AJ
lThermal resistance
Parameter
Thermal resistance, junction - ambient
Datasheet
Symbol RthJA*2
Values Min. Typ. Max.
- - 125
Unit ℃/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown voltage
V(BR)DSS VGS = 0V, ID = 1mA
Breakdown voltage temperature coefficient
ΔV(BR)DSS ID = 1mA ΔTj referenced to 25℃
Zero gate voltage drain current
IDSS VDS = 30V, VGS =...
Similar Datasheet