FSW25N50A

N-Channel MOSFET Applications: Uninterruptible Power Supply(UPS) LCD Panel Power SMPS Power DC-AC Inverter FSW25N50 RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve ESD Capability Improved Ordering Information PART NUMBER FSW25N50A PACKAGE TO-3PN FSW25N50A Pb Lead Free Package and Finish VDSS 500V RDS(ON) (Typ.) 0.18 : ID 25A BRAND FSW25N50A G DS TO-3PN Not to Scale Absolute Maximum Ratings TC=25 oC unless otherwise specified Symbol Parameter FSW25N50A Units VDSS ID ID@ 100 oC IDM PD Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current, VGS@ 10V Power Dissipation Derating Factor above 25 oC (NOTE *1) (NOTE *2) 500 25 Figure 3 Figure 6 230 1.84 V A W W/ oC VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Engergy L=10mH ± 30 2500 V mJ IAS dv/dt Pulsed Avalanche Rating Peak Diode Recovery dv/dt (NOTE *3) Figure 8 5.0 V/ ns VESD(G-S) Gate to Source ESD:HBM_C=100pF,R=1.5K: 6000 V TL TPKG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds Package Body for 10 seconds 300 260 TJ and TSTG Operating Junction and Storage Temperature Range -55 to 150 *Drain Current limited by Maximum Junction Temperature. Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device. oC Thermal Resistance Symbol RTJC RTJA Parameter Junction-to-Case Junction-to-Ambient ...