BL3401

P-Channel High Density Trench MOSDET FEATURES z Super high dense cell trench design for low RDS(ON). z Rugged and Reliable. Pb Lead-free APPLICATIONS z P-channel enhancement mode effect transistor. z Switching application. Production specification BL3401 ORDERING INFORMATION Type No. Marking BL3401 A19TF SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS ID IDM IS Gate -Source voltage Drain Current-Continuous a -Pulseb @ TA = 25 ℃ Drain-Source Diode Forward Current a PD Power Dissipation RθJA Thermal resistance,Junction-to-Ambient TJ, Tstg Junction and Storage Temperature Value -25 ±12 -4.2 -16 -2.2 1.25 75 -55 to +150 Units V V A A W ℃/W ℃ C194 Rev.A www.gmicroelec.com 1 Production specification P-Channel High Density Trench MOSDET BL3401 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT STATIC PARAMETERS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-body Leakage ON CHARACTERISTICSb Gate Threshold Voltage BVDSS IDSS IGSS VGS(th) Static drain-Source on-resistance RDS(ON) DRAIN-SOURCE DIODE CHARACTERISTICSb Drain-Source diode forward voltage VSD DYNAMIC CHARACTERISTICSC VGS=0V,ID=-250μA VDS=-20V, VGS=0V VDS=0V, VGS=-12V VDS=VGS, ID=-250μA VGS=-10V,ID=-4.2A VGS=-4.5V,ID=-4.0A VGS=-2.5V,ID=-1.0A VGS=0V,ID=-1A Input capacitance Output capacitance Reverse transfer capacitance CI...