K1628 Datasheet: 2SK1628





K1628 2SK1628 Datasheet

Part Number K1628
Description 2SK1628
Manufacture Hitachi Semiconductor
Total Page 6 Pages
PDF Download Download K1628 Datasheet PDF

Features: 2SK1628, 2SK1629 Silicon N-Channel MOS F ET Application High speed power switchi ng Features • Low on-resistance • H igh speed switching • Low drive curre nt • No secondary breakdown • Suita ble for switching regulator and DC-DC c onverter Outline TO-3PL D G1 2 3 1. Gat e 2. Drain 3. Source S 2SK1628, 2SK162 9 Absolute Maximum Ratings (Ta = 25°C ) Item Drain to source voltage 2SK16 28 2SK1629 Gate to source voltage Dr ain current Drain peak current Body t o drain diode reverse drain current Ch annel dissipation Channel temperature Storage temperature Note 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I *1 D(pul se) I DR Pch*2 Tch Tstg Ratings 450 50 0 ±30 30 120 30 200 150 –55 to +150 Unit V V A A A W °C °C 2 Electrica l Characteristics (Ta = 25°C) Item Sy mbol Min Drain to source breakdown vol tage 2SK1628 V(BR)DSS 2SK1629 450 500 Gate to source breakdown voltage V(B R)GSS ±30 Gate to source leak current I GSS Zero gate voltage 2SK1628 IDSS drain c.

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2SK1628, 2SK1629
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
TO-3PL
D
G1
2
3
1. Gate
2. Drain
3. Source
S

                 






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