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SBD10C60T

Silan Microelectronics

60V SCHOTTKY RECTIFIER

SBD10C60T/F_Datasheet 10A, 60V SCHOTTKY RECTIFIER DESCRIPTION SBD10C60T/F is schottky rectifier fabricated in silicon ...


Silan Microelectronics

SBD10C60T

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Description
SBD10C60T/F_Datasheet 10A, 60V SCHOTTKY RECTIFIER DESCRIPTION SBD10C60T/F is schottky rectifier fabricated in silicon epitaxial planar technology, Guard ring construction for over voltage protection and enhanced long term reliability. Typical applications are in switching power supplies, converter, free-wheeling diodes, and reverse battery protection. FEATURES ∗ Guard ring for Stress Protection ∗ High Surge Capacity ∗ Low power loss , high efficiency ∗ Low Forward Voltage Drop ∗ 125°C Operating Junction Temperature ORDERING SPECIFICATIONS Part No. SBD10C60T SBD10C60F Package TO-220-3L TO-220F-3L Marking SBD10C60T SBD10C60F Material Pb free Pb free ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Characteristics Maximum Repetitive Peak Reverse Voltage Average Forward Rectified Current Peak Forward Surge [email protected] Operation Junction Temperature Storage Temperature Range Symbol VRRM IFAV IFSM TJ TSTG Ratings 60 10 120 125 -40~125 THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Symbol RθJC Value 2.0 Packing Tube Tube Unit V A A °C °C Unit °C/W HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2011.06.28 Page 1 of 4 SBD10C60T/F_Datasheet ELECTRICAL CHARACTERISTICS (Per Leg) Characteristics Forward Voltage Reverse Current Symbol VF VF VF VF IR IR Test Condition IF=5 A; TJ=25°C IF =5 A; TJ =125°C IF =10 A; TJ =25°C IF =10 A; TJ =125°C VR=60V; TJ =25°C VR=60V; TJ =125°C CHARACTERISTIC CURVES Min....




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