SBD10C60T/F_Datasheet
10A, 60V SCHOTTKY RECTIFIER
DESCRIPTION
SBD10C60T/F is schottky rectifier fabricated in silicon ...
SBD10C60T/F_Datasheet
10A, 60V
SCHOTTKY RECTIFIER
DESCRIPTION
SBD10C60T/F is
schottky rectifier fabricated in silicon epitaxial planar technology, Guard ring construction for over voltage protection and enhanced long term reliability. Typical applications are in switching power supplies, converter, free-wheeling diodes, and reverse battery protection.
FEATURES
∗ Guard ring for Stress Protection ∗ High Surge Capacity ∗ Low power loss , high efficiency ∗ Low Forward Voltage Drop
∗ 125°C Operating Junction Temperature
ORDERING SPECIFICATIONS
Part No. SBD10C60T SBD10C60F
Package TO-220-3L TO-220F-3L
Marking SBD10C60T SBD10C60F
Material Pb free Pb free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Characteristics Maximum Repetitive Peak Reverse Voltage Average Forward Rectified Current Peak Forward Surge
[email protected] Operation Junction Temperature Storage Temperature Range
Symbol VRRM IFAV IFSM TJ TSTG
Ratings 60 10 120 125
-40~125
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case
Symbol RθJC
Value 2.0
Packing Tube Tube
Unit V A A °C °C
Unit °C/W
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0 2011.06.28 Page 1 of 4
SBD10C60T/F_Datasheet
ELECTRICAL CHARACTERISTICS (Per Leg)
Characteristics Forward Voltage Reverse Current
Symbol VF VF VF VF IR IR
Test Condition IF=5 A; TJ=25°C IF =5 A; TJ =125°C IF =10 A; TJ =25°C IF =10 A; TJ =125°C VR=60V; TJ =25°C VR=60V; TJ =125°C
CHARACTERISTIC CURVES
Min....