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SBD10C60F Dataheets PDF



Part Number SBD10C60F
Manufacturers Silan Microelectronics
Logo Silan Microelectronics
Description 60V SCHOTTKY RECTIFIER
Datasheet SBD10C60F DatasheetSBD10C60F Datasheet (PDF)

SBD10C60T/F_Datasheet 10A, 60V SCHOTTKY RECTIFIER DESCRIPTION SBD10C60T/F is schottky rectifier fabricated in silicon epitaxial planar technology, Guard ring construction for over voltage protection and enhanced long term reliability. Typical applications are in switching power supplies, converter, free-wheeling diodes, and reverse battery protection. FEATURES ∗ Guard ring for Stress Protection ∗ High Surge Capacity ∗ Low power loss , high efficiency ∗ Low Forward Voltage Drop ∗ 125°C Operati.

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SBD10C60T/F_Datasheet 10A, 60V SCHOTTKY RECTIFIER DESCRIPTION SBD10C60T/F is schottky rectifier fabricated in silicon epitaxial planar technology, Guard ring construction for over voltage protection and enhanced long term reliability. Typical applications are in switching power supplies, converter, free-wheeling diodes, and reverse battery protection. FEATURES ∗ Guard ring for Stress Protection ∗ High Surge Capacity ∗ Low power loss , high efficiency ∗ Low Forward Voltage Drop ∗ 125°C Operating Junction Temperature ORDERING SPECIFICATIONS Part No. SBD10C60T SBD10C60F Package TO-220-3L TO-220F-3L Marking SBD10C60T SBD10C60F Material Pb free Pb free ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Characteristics Maximum Repetitive Peak Reverse Voltage Average Forward Rectified Current Peak Forward Surge [email protected] Operation Junction Temperature Storage Temperature Range Symbol VRRM IFAV IFSM TJ TSTG Ratings 60 10 120 125 -40~125 THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Symbol RθJC Value 2.0 Packing Tube Tube Unit V A A °C °C Unit °C/W HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2011.06.28 Page 1 of 4 SBD10C60T/F_Datasheet ELECTRICAL CHARACTERISTICS (Per Leg) Characteristics Forward Voltage Reverse Current Symbol VF VF VF VF IR IR Test Condition IF=5 A; TJ=25°C IF =5 A; TJ =125°C IF =10 A; TJ =25°C IF =10 A; TJ =125°C VR=60V; TJ =25°C VR=60V; TJ =125°C CHARACTERISTIC CURVES Min. ------- Max. 0.71 0.61 0.85 0.71 100 15 Unit V V V V μA mA HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2011.06.28 Page 2 of 4 PACKAGE OUTLINE TO-220-3L SBD10C60T/F_Datasheet UNIT: mm TO-220F-3L UNIT: mm HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2011.06.28 Page 3 of 4 SBD10C60T/F_Datasheet Disclaimer: • Silan reserves the right to make changes to the information herein for the improvement of the design and performance without further notice! Customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. • All semiconductor products malfunction or fail with some probability under special conditions. When using Silan products in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards strictly and take essential measures to avoid situations in which a malfunction or failure of such Silan products could cause loss of body injury or damage to property. • Silan will supply the best possible product for customers! ATTACHMENT Revision History Date 2011.06.28 REV 1.0 Initial release Description Page HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2011.06.28 Page 4 of 4 .


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