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Data Sheet No. PD60161-R
IR2108(4) (S) & (PbF)
Features
HALF-BRIDGE DRIVER
• Floating channel designed for bootstrap operation
Fully operational to +600V Tolerant to negative transient voltage
Packages
dV/dt immune
8-Lead SOIC
14-Lead SOIC
• Gate drive supply range from 10 to 20V
IR2108S
IR21084S
• Undervoltage lockout for both channels
• 3.3V, 5V and 15V input logic compatible • Cross-conduction prevention logic • Matched propagation delay for both channels
14-Lead PDIP IR21084
• High side output in phase with HIN input
8-Lead PDIP
• Low side output out of phase with LIN input
IR2108
• Logic and power ground +/- 5V offset.
• Internal 540ns dead-time, and
programmable up to 5us with one
2106/2301//2108//2109/2302/2304 Feature Comparison
external RDT resistor (IR21084)
• Lower di/dt gate driver for better
noise immunity
• Available in Lead-Free
Description
The IR2108(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune
Part
2106/2301 21064 2108 21084
2109/2302 21094 2304
Input logic
HIN/LIN
HIN/LIN
IN/SD HIN/LIN
Crossconduction prevention
logic no
yes
yes
yes
Dead-Time
none
Internal 540ns Programmable 0.54~5 µs
Internal 540ns Programmable 0.54~5 µs
Internal 100ns
Ground Pins
COM VSS/COM
COM VSS/COM
COM VSS/COM
COM
CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS
or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for
minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or
IGBT in the high side configuration which operates up to 600 volts.
Typical Connection
VCC
VCC
VB
HIN HIN HO
LIN LIN VS
COM
LO
up to 600V TO
LOAD
IR2108
(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.
VCC HIN LIN
V SS
HO
VCC
VB
HIN VS
LIN
DT
RDT
VSS COM LO
IR21084
up to 600V TO
LOAD
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IR2108(4) (S) & (PbF)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Symbol
Definition
Min.
Max. Units
VB VS VHO VCC VLO DT
VIN VSS dVS/dt PD
High side floating absolute voltage
High side floating supply offset voltage
High side floating output voltage
Low side and logic fixed supply voltage
Low side output voltage
Programmable dead-time pin voltage (IR21084 only)
Logic input voltage (HIN & LIN)
Logic ground (IR21084 only)
Allowable offset supply voltage transient
Package power dissipation @ TA ≤ +25°C
(8 lead PDIP) (8 lead SOIC)
-0.3 VB - 25 VS - 0.3
-0.3 -0.3 VSS - 0.3 VSS - 0.3 VCC - 25 — — —
625
VB + 0.3 VB + 0.3
25
VCC + 0.3 VCC + 0.3 VCC + 0.3 VCC + 0.3
50
1.0
0.625
V V/ns
(14 lead PDIP) (14 lead SOIC)
— —
1.6 W 1.0
RthJA
Thermal resistance, junction to ambient
(8 lead PDIP) (8 lead SOIC)
— —
125 200
(14 lead PDIP) (14 lead SOIC)
— —
75 °C/W 120
TJ Junction temperature TS Storage temperature TL Lead temperature (soldering, 10 seconds)
— 150
-50 150 °C — 300
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in figure 1. For proper operation the device should be used within the recommended conditions. The VS and VSS offset rating are tested with all supplies biased at 15V differential.
Symbol
Definition
Min.
Max. Units
VB High side floating supply absolute voltage
VS + 10
VS + 20
VS High side floating supply offset voltage
Note 1
600
VHO
High side floating output voltage
VS VB
VCC Low side and logic fixed supply voltage
10 20
VLO Low side output voltage
0
VCC
V
VIN Logic input voltage
IR2108
COM
VCC
IR21084
VSS
VCC
DT Programmable dead-time pin voltage (IR21084 only)
VSS
VCC
VSS Logic ground (IR21084 only) TA Ambient temperature
-5 5 -40 125 °C
Note 1: Logic operational for VS of -5 to +600V. Logic state held for VS of -5V to -VBS. (Please refer to the Design Tip DT97-3 for more details).
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IR2108(4) (S) & (PbF)
Dynamic Electrical Characteristics
VBIAS (VCC, VBS) = 15V, VSS = COM, CL = 1000 pF, TA = 25°C, DT = VSS unless otherwise specified.
Symbol
ton toff MT tr tf DT
MDT
Definition
Turn-on propagation delay
Turn-off propagation delay
Delay matching | ton - toff |
Turn-on rise time
Turn-off fall time
Deadtime: LO turn-off to HO turn-on(DTLO-HO) & HO turn-off to LO turn-on (DTHO-LO)
| |Deadtime matching = DTLO-HO - DTHO-LO
Min.
— — — — — 400 4 — —
Typ.
220 200
0 150 50 540
5 0 0
Max. Units Test Conditions
300 VS = 0V 280 VS = 0V or 600V 30
220 nsec
VS = 0V
80 VS = 0V
680 RDT= 0
6 usec RDT.