A795

INCHANGE Semiconductor isc Silicon PNP Power Transistor DESCRIPTION ·Large Collector Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC1565 APPLICATIONS ·Medium Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICP Collector Current-Pulse Collector Power Dissipation PC @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -150 -5 -1 -1.5 10 150 -55~150 V V A A W ℃ ℃ isc Product Specification 2SA795 isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA795 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -0.1A ; IB= 0 V(BR)EBO Emitter-Base Breakdown Vltage IE= -1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -300mA; IB= -30mA VBE(sat) Base-Emitter Saturation Voltage IC= -300mA; IB= -30mA ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE-1 DC Current Gain IC= -150mA ; VCE= -10V hFE-2 DC Current Gain IC=-500mA ; VCE= -5V fT Current-Gain—Bandwidth Product IC= -50mA ; VCE= -10V COB Output Capacitance IE=0 ; VCB= -100V,ftest= 1MHz ‹ hFE-1 Classifications PQR S 65-110 90-155 130-...