2SJ525
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV)
2SJ525
Chopper Regulator, DC−DC Converter...
2SJ525
TOSHIBA Field Effect
Transistor Silicon P Channel MOS Type (L2−π−MOSV)
2SJ525
Chopper
Regulator, DC−DC Converter and Motor Drive Applications
Unit: mm
z 4-V gate drive
z Low drain−source ON resistance
: RDS (ON) = 0.1 Ω (typ.)
z High forward transfer admittance
: |Yfs| = 4.5 S (typ.)
z Low leakage current : IDSS = −100 μA (max) (VDS = −30 V)
z Enhancement mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Ta = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD
EAS
IAR EAR Tch Tstg
−30 −30 ±20 −5 −20 1.3
517
−5 0.13 150 −55~150
V V V A A W
mJ
A mJ °C °C
JEDEC
―
JEITA
―
TOSHIBA
2-8M1B
Weight: 0.54 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individua...