2SJ537
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSVI)
2SJ537
Chopper Regulator, DC−DC Converte...
2SJ537
TOSHIBA Field Effect
Transistor Silicon P Channel MOS Type (L2−π−MOSVI)
2SJ537
Chopper
Regulator, DC−DC Converter and Motor Drive Applications
Unit: mm
z Low drain−source ON resistance
: RDS (ON) = 0.16 Ω (typ.)
z High forward transfer admittance
: |Yfs| = 3.5 S (typ.)
z Low leakage current : IDSS = −100 μA (VDS = −50 V)
z Enhancement mode : Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD Tch Tstg
−50 −50 ±20 −5 −15 0.9 150 −55~150
V V V A A W °C °C
JEDEC
TO-92MOD
JEITA
―
TOSHIBA
2-5J1C
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal r...